Influence of titanium-substrate roughness on Ca–P–O thin films grown by atomic layer deposition

2013

Abstract Amorphous Ca–P–O films were deposited on titanium substrates using atomic layer deposition, while maintaining a uniform Ca/P pulsing ratio of 6/1 with varying number of atomic layer deposition cycles starting from 10 up to 208. Prior to film deposition the titanium substrates were mechanically abraded using SiC abrasive paper of 600, 1200, 2000 grit size and polished with 3 μm diamond paste to obtain surface roughness R rms values of 0.31 μm, 0.26 μm, 0.16 μm, and 0.10 μm, respectively. The composition and film thickness of as-deposited amorphous films were studied using Time-Of-Flight Elastic Recoil Detection Analysis. The results showed that uniform films could be deposited on ro…

Low-temperature atomic layer deposition of ZnO thin films: Control of crystallinity and orientation

2011

Abstract Low-temperature atomic layer deposition (ALD) processes are intensely looked for to extend the usability of the technique to applications where sensitive substrates such as polymers or biological materials need to be coated by high-quality thin films. A preferred film orientation, on the other hand, is often required to enhance the desired film properties. Here we demonstrate that smooth, crystalline ZnO thin films can be deposited from diethylzinc and water by ALD even at room temperature. The depositions were carried out on Si(100) substrates in the temperature range from 23 to 140 °C. Highly c-axis-oriented films were realized at temperatures below ~ 80 °C. The film crystallinit…

Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition

2015

ZnO films were grown by atomic layer deposition at 35 °C on poly(methyl methacrylate) substrates using diethylzinc and water precursors. The film growth, morphology, and crystallinity were studied using Rutherford backscattering spectrometry, time-of-flight elastic recoil detection analysis, atomic force microscopy, scanning electron microscopy, and x-ray diffraction. The uniform film growth was reached after several hundreds of deposition cycles, preceded by the precursor penetration into the porous bulk and island-type growth. After the full surface coverage, the ZnO films were stoichiometric, and consisted of large grains (diameter 30 nm) with a film surface roughness up to 6 nm (RMS). T…

Characterization of ALD grown Ti x Al y N and Ti x Al y C thin films

2017

Abstract Atomic layer deposition (ALD) was used to grow Ti x Al y N and Ti x Al y C thin films using trimethylaluminum (TMA), titanium tetrachloride and ammonia as precursors. Deposition temperature was varied between 325 °C and 500 °C. Films were also annealed in vacuum and N 2 -atmosphere at 600–1000 °C. Wide range of characterization methods was used including time-of-flight elastic recoil detection analysis (ToF-ERDA), X-ray diffractometry (XRD), X-ray reflectometry (XRR), Raman spectroscopy, ellipsometry, helium ion microscopy (HIM), atomic force microscopy (AFM) and 4-point probe measurement for resistivity. Deposited films were roughly 100 nm thick and contained mainly desired elemen…

Microscratch testing method for systematic evaluation of the adhesion of atomic layer deposited thin films on silicon

2016

The scratch test method is widely used for adhesion evaluation of thin films and coatings. Usual critical load criteria designed for scratch testing of coatings were not applicable to thin atomic layer deposition (ALD) films on silicon wafers. Thus, the bases for critical load evaluation were established and the critical loads suitable for ALD coating adhesion evaluation on silicon wafers were determined in this paper as LCSi1, LCSi2, LCALD1, and LCALD2, representing the failure points of the silicon substrate and the coating delamination points of the ALD coating. The adhesion performance of the ALD Al2O3, TiO2, TiN, and TaCN+Ru coatings with a thickness range between 20 and 600 nm and dep…

Thin film growth into the ion track structures in polyimide by atomic layer deposition

2017

Abstract High-aspect ratio porous structures with controllable pore diameters and without a stiff substrate can be fabricated using the ion track technique. Atomic layer deposition is an ideal technique for depositing thin films and functional surfaces on complicated 3D structures due to the high conformality of the films. In this work, we studied Al2O3 and TiO2 films grown by ALD on pristine polyimide (Kapton HN) membranes as well as polyimide membranes etched in sodium hypochlorite (NaOCl) and boric acid (BO3) solution by means of RBS, PIXE, SEM-EDX and helium ion microcopy (HIM). The focus was on the first ALD growth cycles. The areal density of Al2O3 film in the 400 cycle sample was det…

Broadband Ultrahigh-Resolution Spectroscopy of Particle-Induced X Rays: Extending the Limits of Nondestructive Analysis

2016

Nondestructive analysis (NDA) based on x-ray emission is widely used, for example, in the semiconductor and concrete industries. Here, we demonstrate significant quantitative and qualitative improvements in broadband x-ray NDA by combining particle-induced emission with detection based on superconducting microcalorimeter arrays. We show that the technique offers great promise in the elemental analysis of thin-film and bulk samples, especially in the difficult cases where tens of different elements with nearly overlapping emission lines have to be identified down to trace concentrations. We demonstrate the efficiency and resolving capabilities by spectroscopy of several complex multielement …

Atomic layer deposition of WO3 thin films using W(CO)6 and O3 precursors

2012

Here we report a new atomic layer deposition (ALD) process for WO3 thin films based on W(CO)6 as a tungsten source and ozone as a source of oxygen. A narrow ALD temperature window is found at 195–205 °C for WO3 with a deposition rate of 0.23 A per cycle. As-deposited films are partially crystalline with root mean square (rms) roughness values of 4.7 nm for 90 nm thick films; annealing the films at 600–1000 °C under oxygen or nitrogen atmospheres enhances the degree of crystallinity considerably. Our results show that the straightforward ALD chemistry of carbonyl compounds and ozone is applicable to the deposition of WO3 thin films.

Normal-Metal–Insulator–Superconductor Tunnel Junction With Atomic-Layer-Deposited Titanium Nitride as Superconductor

2015

Tribological properties of thin films made by atomic layer deposition sliding against silicon

2018

Interfacial phenomena, such as adhesion, friction, and wear, can dominate the performance and reliability of microelectromechanical (MEMS) devices. Here, thin films made by atomic layer deposition (ALD) were tested for their tribological properties. Tribological tests were carried out with silicon counterpart sliding against ALD thin films in order to simulate the contacts occurring in the MEMS devices. The counterpart was sliding in a linear reciprocating motion against the ALD films with the total sliding distances of 5 and 20 m. Al2O3 and TiO2 coatings with different deposition temperatures were investigated in addition to Al2O3-TiO2-nanolaminate, TiN, NbN, TiAlCN, a-C:H [diamondlike car…

Characterization of ALD grown TixAlyN and TixAlyC thin films

2017

Atomic layer deposition (ALD) was used to grow TixAlyN and TixAlyC thin films using trimethylaluminum (TMA), titanium tetrachloride and ammonia as precursors. Deposition temperature was varied between 325 °C and 500 °C. Films were also annealed in vacuum and N2-atmosphere at 600–1000 °C. Wide range of characterization methods was used including time-of-flight elastic recoil detection analysis (ToF-ERDA), X-ray diffractometry (XRD), X-ray reflectometry (XRR), Raman spectroscopy, ellipsometry, helium ion microscopy (HIM), atomic force microscopy (AFM) and 4-point probe measurement for resistivity. Deposited films were roughly 100 nm thick and contained mainly desired elements. Carbon, chlorin…

Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition

2022

Funding Information: This work was carried out within the MECHALD project funded by Business Finland and is linked to the Finnish Centers of Excellence in Atomic Layer Deposition (Ref. No. 251220) and Nuclear and Accelerator Based Physics (Ref Nos. 213503 and 251353) of the Academy of Finland. Publisher Copyright: © 2022 Author(s). In microelectromechanical system devices, thin films experience thermal processing at temperatures some cases exceeding the growth or deposition temperature of the film. In the case of the thin film grown by atomic layer deposition (ALD) at relatively low temperatures, post-ALD thermal processing or high device operation temperature might cause performance issues…