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RESEARCH PRODUCT
Characterization of ALD grown Ti x Al y N and Ti x Al y C thin films
Jari MalmManu LahtinenKai ArstilaTimo SajavaaraSami Kinnunensubject
Nuclear and High Energy PhysicsMaterials scienceHydrogen020209 energyAnalytical chemistrychemistry.chemical_element02 engineering and technology021001 nanoscience & nanotechnologyElastic recoil detectionX-ray reflectivitysymbols.namesakeAtomic layer depositionchemistry.chemical_compoundchemistryEllipsometry0202 electrical engineering electronic engineering information engineeringsymbolsTitanium tetrachlorideThin film0210 nano-technologyRaman spectroscopyInstrumentationdescription
Abstract Atomic layer deposition (ALD) was used to grow Ti x Al y N and Ti x Al y C thin films using trimethylaluminum (TMA), titanium tetrachloride and ammonia as precursors. Deposition temperature was varied between 325 °C and 500 °C. Films were also annealed in vacuum and N 2 -atmosphere at 600–1000 °C. Wide range of characterization methods was used including time-of-flight elastic recoil detection analysis (ToF-ERDA), X-ray diffractometry (XRD), X-ray reflectometry (XRR), Raman spectroscopy, ellipsometry, helium ion microscopy (HIM), atomic force microscopy (AFM) and 4-point probe measurement for resistivity. Deposited films were roughly 100 nm thick and contained mainly desired elements. Carbon, chlorine and hydrogen were found to be the main impurities.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2017-09-01 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |