0000000000027539
AUTHOR
Mohamed Chaker
Solid-state-biased coherent detection of ultra-broadband terahertz pulses
Significant progress in nonlinear and ultrafast optics has recently opened new and exciting opportunities for terahertz (THz) science and technology, which require the development of reliable THz sources, detectors, and supporting devices. In this work, we demonstrate the first solid-state technique for the coherent detection of ultra-broadband THz pulses (0.1-10 THz), relying on the electric-field-induced second-harmonic generation in a thin layer of ultraviolet fused silica. The proposed CMOS-compatible devices, which can be realized with standard microfabrication techniques, allow us to perform ultra-broadband detection with a high dynamic range by employing probe laser powers and bias v…
Homodyne Solid-State Biased Coherent Detection of Ultra-Broadband Terahertz Pulses with Static Electric Fields.
We present an innovative implementation of the solid-state-biased coherent detection (SSBCD) technique, which we have recently introduced for the reconstruction of both amplitude and phase of ultra-broadband terahertz pulses. In our previous works, the SSBCD method has been operated via a heterodyne scheme, which involves demanding square-wave voltage amplifiers, phase-locked to the THz pulse train, as well as an electronic circuit for the demodulation of the readout signal. Here, we demonstrate that the SSBCD technique can be operated via a very simple homodyne scheme, exploiting plain static bias voltages. We show that the homodyne SSBCD signal turns into a bipolar transient when the stat…
Invited Article: Ultra-broadband terahertz coherent detection via a silicon nitride-based deep sub-wavelength metallic slit
We present a novel class of CMOS-compatible devices aimed to perform the solid-state-biased coherent detection of ultrashort terahertz pulses, i.e., featuring a gap-free bandwidth at least two decades-wide. Such a structure relies on a 1-µm-wide slit aperture located between two parallel aluminum pads, embedded in a 1-µm-thick layer of silicon nitride, and deposited on a quartz substrate. We show that this device can detect ultra-broadband terahertz pulses by employing unprecedented low optical probe energies of only a few tens of nanojoules. This is due to the more than one order of magnitude higher nonlinear coefficient of silicon nitride with respect to silica, the nonlinear material emp…
Affordable, ultra-broadband coherent detection of terahertz pulses via CMOS-compatible solid-state devices
We demonstrate the first fully solid-state technique for the coherent detection of ultra-broadband THz pulses (0.1-10 THz), relying on the electric-field-induced second-harmonic generation attained in integrated CMOS-compatible devices.
Silicon nitride-based deep sub-λ slit for ultra-broadband THz coherent detection
We report on the characterization of a new type of CMOS-compatible device for terahertz solid-state biased coherent detection, which relies on a 1-µm-wide metallic slit embedded in a thin film of PECVD-grown silicon nitride.
Versatile metal-wire waveguides for broadband terahertz signal processing and multiplexing.
AbstractWaveguides play a pivotal role in the full deployment of terahertz communication systems. Besides signal transporting, innovative terahertz waveguides are required to provide versatile signal-processing functionalities. Despite fundamental components, such as Bragg gratings, have been recently realized, they typically rely on complex hybridization, in turn making it extremely challenging to go beyond the most elementary functions. Here, we propose a universal approach, in which multiscale-structured Bragg gratings can be directly etched on metal-wires. Such an approach, in combination with diverse waveguide designs, allows for the realization of a unique platform with remarkable str…