6533b83afe1ef96bd12a7a70
RESEARCH PRODUCT
Silicon nitride-based deep sub-λ slit for ultra-broadband THz coherent detection
Alessandro TomasinoMarco PecciantiMohamed ChakerYoann JestinRiccardo PiccoliLuca RazzariAlessandro BusaccaSebastien DelpratMatteo ClericiRoberto Morandottisubject
Materials scienceSiliconbusiness.industryTerahertz radiationTerahertzchemistry.chemical_elementNonlinear opticsSettore ING-INF/01 - Elettronica01 natural sciencesTerahertz spectroscopy and technologycoherent detection010309 opticschemistry.chemical_compoundsilicon nitridechemistrySilicon nitride0103 physical sciencesBroadbandOptoelectronicsHeterodyne detectionThin film010306 general physicsbusinessdescription
We report on the characterization of a new type of CMOS-compatible device for terahertz solid-state biased coherent detection, which relies on a 1-µm-wide metallic slit embedded in a thin film of PECVD-grown silicon nitride.
year | journal | country | edition | language |
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2018-01-01 |