0000000000034613
AUTHOR
R. Grants
Characterization of Crystalline Structure and Morphology of Ga<sub>2</sub>O<sub>3</sub> Thin Film Grown by MOCVD Technique
Growth of gallium oxide thin film was realized with MOCVD on (0001) sapphire substrate. Structural and compositional properties of thin film were studied employing trimethylgallium and water as precursors, carrier gases were H2 and N2. Obtained film is polycrystalline and predominantly consisted of (201) oriented β-Ga2O3. Sample exhibited blue luminescence which is attributed to oxygen vacancies. H2 gas proved to have beneficial effect on film quality and overall growth process.
Accumulation of radiation defects and modification of micromechanical properties under MgO crystal irradiation with swift 132Xe ions
This work has been carried out within the framework of the EUROfusion Consortium and has received funding from the Euratom research and training programme 2014-2018 and 2019-2020 under grant agreement No. 633053. The views and opinions expressed herein do not necessarily reflect those of the European Commission. A.A. also acknowledges support via the project GF AP05134257 of Ministry of Education and Science of the Republic of Kazakhstan .
Formation of dislocations in LiF irradiated with 3He and 4He ions
Influence of the irradiation with 13.5 MeV 3He and 5 MeV 4He ions on the micro-structure and mechanical properties of LiF single crystals was studied. The depth profiles of nanoindentation, dislocation mobility, selective chemical etching and photoluminescence served for the characterization of damage. Strong ion-induced increase of hardness and decrease in dislocation mobility at the stage of track overlapping due to accumulation of dislocations and other extended defects was observed. At high fluences (1015 ions/cm2) the hardness saturates at about 3.5 GPa (twofold increase in comparison to a virgin crystal) thus confirming high efficiency of light projectiles in modifications of structur…
Modification of the Structure and Nano-Mechanical Properties of LiF Crystals Under Irradiation with Swift Heavy Ions
The modifications of the structure and hardness of LiF crystals under high-fluence irradiation with MeV- and GeV-energy Au ions have been studied using nanoindentation and atomic force microscopy. The formation of ion-induced dislocations and bulk nanostructures consisting of grains with nanoscale dimensions (50 nm - 100 nm) has been observed. The structural modifications are accompanied by a strong ion-induced hardening which is related to dislocation impeding by assemblies of defect aggregates, dislocation loops of vacancy and interstitial types and grain boundaries. For MeV ions, the modifications are localized in a thin surface layer (few mm) where much higher density of deposited energ…
Photoinduced mass transport in amorphous As‐S‐Se films
Direct surface patterning due to photoinduced mass transport in amorphous As-S-Se films has been studied. Illumination of the films with two orthogonally (±45°) polarized beam interference pattern causes the formation of surface relief gratings on the films due to lateral mass transport regarding to light propagation direction. The obtained experimental results showed the dependence of photoinduced surface relief depth (Δh) on film thickness during holographic recording from film side as well as from glass substrate side. After constant exposure doses for the films with a thickness d 1 μm values of Δh do not depend significantly on the film thickness for recording from film side but decreas…
Formation of dislocations and hardening of LiF under high-dose irradiation with 5–21 MeV 12C ions
R. Zabels, I. Manika, J. Maniks, and R.Grants acknowledge the national project IMIS2, and A. Dauletbekova, M. Baizhumanov, and M. Zdorovets the Ministry of Education and Science of the Republic of Kazakhstan for the financial support.
MeV-energy Xe ion-induced damage in LiF: The contribution of electronic and nuclear stopping mechanisms
The contribution of electronic and nuclear damage mechanisms in the modification of structure and micromechanical properties of LiF crystals irradiated with 52, 224, and 450 MeV Xe ions at fluences 1010–1014 ions cm−2 has been studied. The ion-induced formation of dislocations and hardening in LiF at fluences above 1010 ions cm−2 has been observed. The depth profiles of nanoindentation show a joint contribution of electronic excitation and nuclear (impact) mechanisms to the ion-induced hardening. The electronic excitation mechanism dominates in the major part of the ion range while the impact mechanism prevails in a narrow zone at the end of the ion range. The efficiency of hardening produc…
Modification of LiF structure by irradiation with swift heavy ions under oblique incidence
The structural modifications of LiF irradiated with swift heavy ions under oblique angles have been investigated using AFM, SEM, chemical etching, nanoindentation and optical absorption spectroscopy. LiF crystals were irradiated under incidence angles of 30 and 70 degrees with 2.2 GeV Au (fluence 57?l011 ions-cm2) and 150 MeV Kr ions (fluence 1012?1014 ions?cm?2). Structural study on sample cross-sections shows that two damage regions ? (1) nanostructured zone and (2) dislocation ? rich zone, which are typical for irradiations at normal incidence, appear also in samples irradiated under oblique angles. However in the latter case a more complex structure is formed that leads to stronger ion-…
Nanostructuring and strengthening of LiF crystals by swift heavy ions: AFM, XRD and nanoindentation study
Abstract Modifications of the structure and micromechanical properties of LiF crystals under high-fluence irradiation (10 11 –10 13 ions cm −2 ) with swift C, Ti, Au and U ions of the specific energy of 11.1 MeV/u have been studied. In the case of heavy ions (U, Au), the AFM and SEM results reveal the bulk nanostructure consisting of columnar grains with nano-scale dimensions (50–100 nm). For lighter C ions the structure enriched with prismatic dislocation loops has been observed. High-resolution XRD reciprocal space maps for nano-structured LiF expose a mosaic-type structure with low-angle boundaries between grains.
MeV–GeV ion induced dislocation loops in LiF crystals
Abstract Formation of prismatic dislocation loops and evolution of dislocation structure in LiF crystals irradiated with swift 238U and 36S ions of specific energy 11 MeV/u at fluences up to 1013 ions cm−2 has been investigated using chemical etching and AFM. It has been shown that prismatic dislocations are formed in the stage of track overlapping above threshold fluences Φ ≈ 109 U cm−2 and Φ ≈ 1010 S cm−2. The diameter of dislocation loops reaches 600–1000 nm for 238U ions and 200 nm for 36S ions. The dislocations created by 238U ions are arranged in rows along the direction of ion beam, whereas 36S ions create freely distributed dislocation loops each of them being oriented along the ion…
Depth profiles of damage creation and hardening in MgO irradiated with GeV heavy ions
This work has been performed within the framework of the EUROfusion Enabling Research project: ENR-MFE19.ISSP-UL-02 “Advanced experimental and theoretical analysis of defect evolution and structural disordering in optical and dielectric materials for fusion applications”. The views and opinions expressed herein do not necessarily reflect those of the European Commission.