6533b7cefe1ef96bd1256f60
RESEARCH PRODUCT
Characterization of Crystalline Structure and Morphology of Ga<sub>2</sub>O<sub>3</sub> Thin Film Grown by MOCVD Technique
Alvars KjapsnaR. IgnatansAnatoly N. TrukhinL. DimitrocenkoI. TaleR. Grantssubject
Materials scienceMorphology (linguistics)Mechanical EngineeringAnalytical chemistrychemistry.chemical_element02 engineering and technologyCrystal structure010402 general chemistry021001 nanoscience & nanotechnology01 natural sciencesOxygen0104 chemical scienceschemistry.chemical_compoundchemistryMechanics of MaterialsGeneral Materials ScienceCrystalliteMetalorganic vapour phase epitaxyTrimethylgalliumThin film0210 nano-technologyLuminescencedescription
Growth of gallium oxide thin film was realized with MOCVD on (0001) sapphire substrate. Structural and compositional properties of thin film were studied employing trimethylgallium and water as precursors, carrier gases were H2 and N2. Obtained film is polycrystalline and predominantly consisted of (201) oriented β-Ga2O3. Sample exhibited blue luminescence which is attributed to oxygen vacancies. H2 gas proved to have beneficial effect on film quality and overall growth process.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2016-12-01 | Key Engineering Materials |