0000000000038456
AUTHOR
Patrick Fiorenza
Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers
This work reports on the effect of high temperature annealing on the electrical properties of p-type implanted 4H-SiC. Ion implantations of Aluminum (Al) at different energies (30-200 keV) were carried out to achieve 300 nm thick acceptor box profiles with a concentration of about 10(20) at/cm(3). The implanted samples were annealed at high temperatures (1675-1825 degrees C). Morphological analyses of the annealed samples revealed only a slight increase of the surface roughness RMS up to 1775 degrees C, while this increase becomes more significant at 1825 degrees C (RMS = 1.2 nm). Room temperature Hall measurements resulted in a hole concentration in the range 0.65-1.34 x 10(18)/cm(3) and m…
Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures
In this article, the charge trapping phenomena in Al2O3 thin films grown by atomic layer deposition (ALD) on AlGaN/GaN heterostructures have been studied by time-dependent capacitance–voltage (C-V) measurements as a function of temperature. In particular, monitoring the transient of the capacitance enabled us to estimate the maximum depth of the insulating layer interested by the negative charge trapping effect under our bias stress conditions and to determine a charge traps density in the bulk Al2O3 in the order of 3 × 1019 cm−3. A temperature dependent C-V analysis up to 150 °C demonstrated the presence of two competitive mechanisms that rule the electron capture and emission in the Al2O3…
Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC
In this paper, 2D/3D heterojunction diodes have been fabricated by pulsed laser deposition (PLD) of MoS2 on 4H-SiC(0001) surfaces with different doping levels, i.e., n− epitaxial doping (≈1016 cm−3) and n+ ion implantation doping (>1019 cm−3). After assessing the excellent thickness uniformity (≈3L-MoS2) and conformal coverage of the PLD-grown films by Raman mapping and transmission electron microscopy, the current injection across the heterojunctions is investigated by temperature-dependent current–voltage characterization of the diodes and by nanoscale current mapping with conductive atomic force microscopy. A wide tunability of the transport properties is shown by the SiC surface dopi…
Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization
In this paper, we report a multiscale investigation of the compositional, morphological, structural, electrical, and optical emission properties of 2H-MoS2 obtained by sulfurization at 800 °C of very thin MoO3 films (with thickness ranging from ~2.8 nm to ~4.2 nm) on a SiO2/Si substrate. XPS analyses confirmed that the sulfurization was very effective in the reduction of the oxide to MoS2, with only a small percentage of residual MoO3 present in the final film. High-resolution TEM/STEM analyses revealed the formation of few (i.e., 2–3 layers) of MoS2 nearly aligned with the SiO2 surface in the case of the thinnest (~2.8 nm) MoO3 film, whereas multilayers of MoS2 partially standing up with r…