0000000000040461
AUTHOR
Floriana Lombardi
Catalyst-free vapour-solid technique for deposition of Bi2Te3 and Bi2Se3 nanowires/nanobelts with topological insulator properties.
We present a simple two-stage vapour–solid synthesis method for the growth of bismuth chalcogenide (Bi2Te3, Bi2Se3) topological insulator nanowires/nanobelts by using Bi2Se3 or Bi2Te3 powders as source materials. During the first stage of the synthesis process nanoplateteles, serving as “catalysts” for further nanowire/nanobelt growth, are formed. At a second stage of the synthesis, the introduction of a N2 flow at 35 Torr pressure in the chamber induces the formation of free standing nanowires/nanobelts. The synthesised nanostructures demonstrate a layered single-crystalline structure and Bi : Se and Bi : Te ratios 40 : 60 at% for both Bi2Se3 and Bi2Te3 nanowires/nanobelts. The presence of…
Ultrathin Anodic Aluminum Oxide Membranes for Production of Dense Sub-20 nm Nanoparticle Arrays
We present a systematic study of membrane structure (pore diameter and arrangement) in anodized aluminum oxide (AAO) layers obtained by anodization voltages 8-20 V in sulfuric and 15-40 V in oxalic acid electrolyte solutions. Anodization of bulk aluminum in sulfuric acid at 10 V potential was found to be optimal for production or ultrathin freestanding membranes with pore diameter in sub-20 nm range. The developed process with slow electrochemical reaction results in AAO membranes with thickness below 70 nm. The minimum required time for formation of continuous AAO membrane was determined and influence of electrolyte concentration on pore diameter in membrane after barrier layer removal ana…
Bulk-free topological insulator Bi 2 Se 3 nanoribbons with magnetotransport signatures of Dirac surface states
Many applications for topological insulators (TIs) as well as new phenomena require devices with reduced dimensions. While much progress has been made to realize thin films of TIs with low bulk carrier density, nanostructures have not yet been reported with similar properties, despite the fact that size confinement should help reduce contributions from bulk carriers. Here we demonstrate that Bi2Se3 nanoribbons, grown by a simple catalyst-free physical-vapour deposition, have inherently low bulk carrier densities, and can be further made bulk-free by size confinement, thus revealing the high mobility topological surface states. Magneto transport and Hall conductance measurements, in single n…
High-Mobility Ambipolar Magnetotransport in Topological Insulator Bi2Se3 Nanoribbons
Nanoribbons of topological insulators (TIs) have been suggested for a variety of applications exploiting the properties of the topologically protected surface Dirac states. In these proposals it is crucial to achieve a high tunability of the Fermi energy, through the Dirac point while preserving a high mobility of the involved carriers. Tunable transport in TI nanoribbons has been achieved by chemical doping of the materials so to reduce the bulk carriers' concentration, however at the expense of the mobility of the surface Dirac electrons, which is substantially reduced. Here we study bare ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ nanoribbons transferred on a variety of oxide substrates and dem…
Surface structure promoted high-yield growth and magnetotransport properties of Bi2Se3 nanoribbons
AbstractIn the present work, a catalyst-free physical vapour deposition method is used to synthesize high yield of Bi2Se3 nanoribbons. By replacing standard glass or quartz substrates with aluminium covered with ultrathin porous anodized aluminium oxide (AAO), the number of synthesized nanoribbons per unit area can be increased by 20–100 times. The mechanisms of formation and yield of the nanoribbons synthesized on AAO substrates having different arrangement and size of pores are analysed and discussed. It is shown that the yield and average length of the nanoribbons can base tuned by adjustment of the synthesis parameters. Analysis of magnetotransport measurements for the individual Bi2Se3…
Role of Nanoelectromechanical Switching in the Operation of Nanostructured Bi2Se3 Interlayers between Conductive Electrodes
We demonstrate a simple low-cost method of preparation of layered devices for opto- and thermoelectric applications. The devices consist of a functional Bi2Se3 layer of randomly oriented nanoplates and flexible nanobelts enclosed between two flat indium tin oxide (ITO) electrodes. The number of functional interconnections between the ITO electrodes and correspondingly the efficiency of the device can be increased by gradual nanoelectromechanical (NEM) switching of flexible individual Bi2Se3 nanobelts in the circuit. NEM switching is achieved through applying an external voltage to the device. For the first time, we investigate in situ NEM switching and breakdown parameters of Bi2Se3 nanobel…
Correlation analysis of vibration modes in physical vapour deposited Bi 2 Se 3 thin films probed by the Raman mapping technique
In this work, the Raman spectroscopy mapping technique is used for the analysis of mechanical strain in Bi2Se3 thin films of various (3-400 nm) thicknesses synthesized by physical vapour deposition on amorphous quartz and single-layer graphene substrates. The evaluation of strain effects is based on the correlation analysis of in-plane (E2g) and out-of-plane (A21g) Raman mode positions. For Bi2Se3 films deposited on quartz, experimental datapoints are scattered along the line with a slope of similar to 0.85, related to the distribution of hydrostatic strain. In contrast to quartz/Bi2Se3 samples, for graphene/Bi2Se3 heterostructures with the same thicknesses, an additional negative slope of …
Resistive state triggered by vortex entry in YBa 2 Cu 3 O 7−δ nanostructures
We have realized YBa2Cu3O7-delta nanowires and nano Superconducting Quantum Interference Devices (nanoSQUID). The measured temperature dependence of the wire resistances below the superconducting transition temperature has been analyzed using a thermally activated vortex entry model valid for wires wider than the superconducting coherence length. The extracted zero temperature values of the London penetration depth, lambda(0) similar or equal to 270 +/- 15 nm, are in good agreement with the value obtained from critical current modulations as a function of an externally applied magnetic field in a nanoSQUID implementing two nanowires.
Topological insulator nanoribbon Josephson junctions: Evidence for size effects in transport properties
We have used Bi$_2$Se$_3$ nanoribbons, grown by catalyst-free Physical Vapor Deposition to fabricate high quality Josephson junctions with Al superconducting electrodes. In our devices we observe a pronounced reduction of the Josephson critical current density $J_c$ by reducing the width of the junction, which in our case corresponds to the width of the nanoribbon. Because the topological surface states extend over the entire circumference of the nanoribbon, the superconducting transport associated to them is carried by modes on both the top and bottom surfaces of the nanoribbon. We show that the $J_c$ reduction as a function of the nanoribbons width can be accounted for by assuming that on…
Space charge limited current mechanism in Bi2S3 nanowires
We report on the charge transport properties of individual Bi2S3 nanowires grown within the pores of anodized aluminum oxide templates. The mean pore diameter was 80 nm. Space charge limited current is the dominating conduction mechanism at temperatures below 160 K. Characteristic parameters of nanowires, such as trap concentration and trap characteristic energy, were estimated from current-voltage characteristics at several temperatures.
Fabrication of ultra thin anodic aluminium oxide membranes by low anodization voltages
Formation of ultrathin anodised aluminium oxide (AAO) membranes with high aspect ratio by Al anodization in sulphuric and oxalic acids at low potentials was investigated. Low anodization potentials ensure slow electrochemical reaction speeds and formation of AAO membranes with pore diameter and thickness below 20 nm and 70 nm respectively. Minimum time necessary for formation of continuous AAO membranes was determined. AAO membrane pore surface was covered with polymer Paraloid B72TM to transport it to the selected substrate. The fabricated ultra thin AAO membranes could be used to fabricate nanodot arrays on different surfaces.
Author Correction: Induced unconventional superconductivity on the surface states of Bi2Te3 topological insulator
Topological superconductivity is central to a variety of novel phenomena involving the interplay between topologically ordered phases and broken-symmetry states. The key ingredient is an unconventional order parameter, with an orbital component containing a chiral p x + ip y wave term. Here we present phase-sensitive measurements, based on the quantum interference in nanoscale Josephson junctions, realized by using Bi2Te3 topological insulator. We demonstrate that the induced superconductivity is unconventional and consistent with a sign-changing order parameter, such as a chiral p x + ip y component. The magnetic field pattern of the junctions shows a dip at zero externally applied magneti…
Induced unconventional superconductivity on the surface states of Bi2Te3 topological insulator
Topological superconductivity is central to a variety of novel phenomena involving the interplay between topologically ordered phases and broken-symmetry states. The key ingredient is an unconventional order parameter, with an orbital component containing a chiral $p_x$ + i$p_y$ wave term. Here we present phase-sensitive measurements, based on the quantum interference in nanoscale Josephson junctions, realized by using Bi$_2$Te$_3$ topological insulator. We demonstrate that the induced superconductivity is unconventional and consistent with a sign-changing order parameter, such as a chiral $p_x$ + i$p_y$ component. The magnetic field pattern of the junctions shows a dip at zero externally a…
Magnetotransport Studies of Encapsulated Topological Insulator Bi2Se3 Nanoribbons
This research was funded by the Latvian Council of Science, project “Highly tunable surface state transport in topological insulator nanoribbons”, No. lzp-2020/2-0343, and by the European Union’s Horizon 2020 research and innovation program, Grant Agreement No. 766714/ HiTIMe. Institute of Solid-State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART2.
High transparency Bi 2 Se 3 topological insulator nanoribbon Josephson junctions with low resistive noise properties
Bi$_2$Se$_3$ nanoribbons, grown by catalyst-free Physical Vapour Deposition, have been used to fabricate high quality Josephson junctions with Al superconducting electrodes. The conductance spectra (dI/dV) of the junctions show clear dip-peak structures characteristic of multiple Andreev reflections. The temperature dependence of the dip-peak features reveals a highly transparent Al/Bi$_2$Se$_3$ topological insulator nanoribbon interface and Josephson junction barrier. This is supported by the high values of the Bi$_2$Se$_3$ induced gap and of I$_c$R$_n$ (I$_c$ critical current, R$_n$ normal resistance of the junction) product both of the order of 160 $\mu$eV, a value close to the Al gap. T…