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RESEARCH PRODUCT
Role of Nanoelectromechanical Switching in the Operation of Nanostructured Bi2Se3 Interlayers between Conductive Electrodes
Margarita BaitimirovaJana AndzaneJelena KosmacaDonats ErtsFloriana Lombardisubject
Materials scienceNanotechnology02 engineering and technology010402 general chemistry021001 nanoscience & nanotechnology01 natural sciences0104 chemical sciencesIndium tin oxidechemistry.chemical_compoundchemistryElectrodeThermoelectric effectGeneral Materials ScienceBismuth selenide0210 nano-technologyElectrical conductorLayer (electronics)Voltagedescription
We demonstrate a simple low-cost method of preparation of layered devices for opto- and thermoelectric applications. The devices consist of a functional Bi2Se3 layer of randomly oriented nanoplates and flexible nanobelts enclosed between two flat indium tin oxide (ITO) electrodes. The number of functional interconnections between the ITO electrodes and correspondingly the efficiency of the device can be increased by gradual nanoelectromechanical (NEM) switching of flexible individual Bi2Se3 nanobelts in the circuit. NEM switching is achieved through applying an external voltage to the device. For the first time, we investigate in situ NEM switching and breakdown parameters of Bi2Se3 nanobelts, visualize the processes occurring in the device under the influence of applied external voltage, and establish the limitations to the possible operational conditions.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2016-04-26 | ACS Applied Materials & Interfaces |