Influence of hole transport material ionization energy on the performance of perovskite solar cells
Halide perovskites have shown excellent photophysical properties for solar cell applications which led to a rapid increase of the device efficiency. Understanding the charge carrier dynamics within the active perovskite absorber and at its interfaces will be key to further progress in their development. Here we present a series of fully evaporated devices employing hole transport materials with different ionization energies. The open circuit voltage of the devices, along with their ideality factors, confirm that the former is mainly determined by the bulk and surface recombination in the perovskite, rather than by the energetic offset between the valence band of the perovskite and the highe…
Charge injection and trapping at perovskite interfaces with organic hole transporting materials of different ionization energies
The extraction of photogenerated holes from CH3NH3PbI3 is crucial in perovskite solar cells. Understanding the main parameters that influence this process is essential to design materials and devices with improved efficiency. A series of vacuum deposited hole transporting materials (HTMs) of different ionization energies, used in efficient photovoltaic devices, are studied here by means of femtosecond transient absorption spectroscopy. We find that ultrafast charge injection from the perovskite into the different HTMs (<100 fs) competes with carrier thermalization and occurs independently of their ionization energy. Our results prove that injection takes place from hot states in the valence…
Efficient Photo- and Electroluminescence by Trap States Passivation in Vacuum-Deposited Hybrid Perovskite Thin Films
Methylammonium lead iodide (MAPI) has excellent properties for photovoltaic applications, although it typically shows low photoluminescence quantum yield. Here, we report on vacuum-deposited MAPI perovskites obtained by modifying the methylammonium iodide (MAI) to PbI2 ratio during vacuum deposition. By studying the excitation density dependence of the photoluminescence lifetime, a large concentration of trap states was deduced for the stoichiometric MAPI films. The use of excess MAI during vacuum processing is capable of passivating these traps, resulting in luminescent films which can be used to fabricate planar light-emitting diodes with quantum efficiency approaching 2%.
Origin of the Enhanced Photoluminescence Quantum Yield in MAPbBr 3 Perovskite with Reduced Crystal Size
Methylammonium lead bromide perovskite (MAPbBr3) has been widely investigated for applications in visible perovskite light-emitting diodes (LEDs). Fine-tuning of the morphology and of the crystal size, from the microscale down to the quantum confinement regime, has been used to increase the photoluminescence quantum yield (PLQY). However, the physical processes underlying the PL emission of this perovskite remain unclear. Here, we elucidate the origin of the PL emission of polycrystalline MAPbBr3 thin films by different spectroscopic techniques. We estimate the exciton binding energy, the reduced exciton effective mass, and the trap density. Moreover, we confirm the coexistence of free carr…