0000000000075138

AUTHOR

Damien Deleruyelle

showing 2 related works from this author

Effect of high-k materials in the control dielectric stack of nanocrystal memories

2004

In this paper we studied program/erase characteristics by FN tunneling in Si nanocrystal memories. Starting from a very good agreement between experimental data and simulations in the case of a memory cell with a thin tunnel oxide, Silicon dots as medium for charge storage, and a CVD silicon dioxide used as control dielectric, we present estimated values of the charge trapping when a high-k material is present in the control dielectric. We then show preliminary results of nanocrystal memories with control dielectric containing high-k materials. ©2004 IEEE.

Materials scienceSiliconbusiness.industrySilicon dioxideGate dielectricchemistry.chemical_elementDielectricSettore ING-INF/01 - Elettronicachemistry.chemical_compoundEngineering (all)chemistryNanocrystalNanoelectronicsStack (abstract data type)Electronic engineeringOptoelectronicsbusinessHigh-κ dielectric
researchProduct

Nanosession: Valence Change Memories - A Look Inside

2013

Materials scienceCondensed matter physicsValence (psychology)
researchProduct