6533b7cffe1ef96bd1258e97

RESEARCH PRODUCT

Effect of high-k materials in the control dielectric stack of nanocrystal memories

B. De SalvoD. CorsoGiuseppe NicotraCosimo GerardiIsodiana CrupiMarc GelyN. BuffetE. SpitaleSalvatore LombardoDamien Deleruyelle

subject

Materials scienceSiliconbusiness.industrySilicon dioxideGate dielectricchemistry.chemical_elementDielectricSettore ING-INF/01 - Elettronicachemistry.chemical_compoundEngineering (all)chemistryNanocrystalNanoelectronicsStack (abstract data type)Electronic engineeringOptoelectronicsbusinessHigh-κ dielectric

description

In this paper we studied program/erase characteristics by FN tunneling in Si nanocrystal memories. Starting from a very good agreement between experimental data and simulations in the case of a memory cell with a thin tunnel oxide, Silicon dots as medium for charge storage, and a CVD silicon dioxide used as control dielectric, we present estimated values of the charge trapping when a high-k material is present in the control dielectric. We then show preliminary results of nanocrystal memories with control dielectric containing high-k materials. ©2004 IEEE.

yearjournalcountryeditionlanguage
2004-11-22
http://hdl.handle.net/10447/179568