0000000000075135

AUTHOR

Marc Gely

showing 2 related works from this author

Effect of high-k materials in the control dielectric stack of nanocrystal memories

2004

In this paper we studied program/erase characteristics by FN tunneling in Si nanocrystal memories. Starting from a very good agreement between experimental data and simulations in the case of a memory cell with a thin tunnel oxide, Silicon dots as medium for charge storage, and a CVD silicon dioxide used as control dielectric, we present estimated values of the charge trapping when a high-k material is present in the control dielectric. We then show preliminary results of nanocrystal memories with control dielectric containing high-k materials. ©2004 IEEE.

Materials scienceSiliconbusiness.industrySilicon dioxideGate dielectricchemistry.chemical_elementDielectricSettore ING-INF/01 - Elettronicachemistry.chemical_compoundEngineering (all)chemistryNanocrystalNanoelectronicsStack (abstract data type)Electronic engineeringOptoelectronicsbusinessHigh-κ dielectric
researchProduct

How far will Silicon nanocrystals push the scaling limits of NVMs technologies?

2004

For the first time, memory devices with optimized high density (2E12#/cm/sup 2/) LPCVD Si nanocrystals have been reproducibly achieved and studied on an extensive statistical basis (from single cell up to 1 Mb test-array) under different programming conditions. An original experimental and theoretical analysis of the threshold voltage shift distribution shows that Si nanocrystals have serious potential to push the scaling of NOR and NAND flash at least to the 35 nm and 65 nm nodes, respectively.

Materials sciencesezeleSiliconbusiness.industryNAND gatechemistry.chemical_elementNanotechnologyChemical vapor depositionSettore ING-INF/01 - ElettronicaThreshold voltageNanocrystalNanoelectronicschemistryOptoelectronicsElectrical and Electronic EngineeringbusinessScience technology and societyScaling
researchProduct