0000000000008991

AUTHOR

B. De Salvo

showing 5 related works from this author

Effect of high-k materials in the control dielectric stack of nanocrystal memories

2004

In this paper we studied program/erase characteristics by FN tunneling in Si nanocrystal memories. Starting from a very good agreement between experimental data and simulations in the case of a memory cell with a thin tunnel oxide, Silicon dots as medium for charge storage, and a CVD silicon dioxide used as control dielectric, we present estimated values of the charge trapping when a high-k material is present in the control dielectric. We then show preliminary results of nanocrystal memories with control dielectric containing high-k materials. ©2004 IEEE.

Materials scienceSiliconbusiness.industrySilicon dioxideGate dielectricchemistry.chemical_elementDielectricSettore ING-INF/01 - Elettronicachemistry.chemical_compoundEngineering (all)chemistryNanocrystalNanoelectronicsStack (abstract data type)Electronic engineeringOptoelectronicsbusinessHigh-κ dielectric
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Multi-bit storage through Si nanocrystals embedded in SiO2

2004

We have realized Si nanocrystal memory cells in which the Si dots have been deposited by CVD on SiO2 and then covered by a CVD control oxide. In this paper, we report a study on the potential of these cells for dual bit storage. © 2004 Elsevier B.V. All rights reserved.

Materials scienceElectronic Optical and Magnetic MaterialOxideSurfaces Coatings and FilmNanotechnologyCondensed Matter PhysicsSettore ING-INF/01 - ElettronicaAtomic and Molecular Physics and OpticsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsBit (horse)chemistry.chemical_compoundchemistryNanocrystalcardiovascular diseasesElectrical and Electronic Engineering
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How far will Silicon nanocrystals push the scaling limits of NVMs technologies?

2004

For the first time, memory devices with optimized high density (2E12#/cm/sup 2/) LPCVD Si nanocrystals have been reproducibly achieved and studied on an extensive statistical basis (from single cell up to 1 Mb test-array) under different programming conditions. An original experimental and theoretical analysis of the threshold voltage shift distribution shows that Si nanocrystals have serious potential to push the scaling of NOR and NAND flash at least to the 35 nm and 65 nm nodes, respectively.

Materials sciencesezeleSiliconbusiness.industryNAND gatechemistry.chemical_elementNanotechnologyChemical vapor depositionSettore ING-INF/01 - ElettronicaThreshold voltageNanocrystalNanoelectronicschemistryOptoelectronicsElectrical and Electronic EngineeringbusinessScience technology and societyScaling
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Effects of partial self-ordering of Si dots formed by chemical vapor deposition on the threshold voltage window distribution of Si nanocrystal memori…

2006

We study the role that the denuded zone around Si nanocrystals obtained by chemical vapor deposition plays on the fluctuations of the dot surface coverage. In fact, the capture mechanism of the silicon adatoms in the proximity of existing dots restricts the number of possible nucleation sites, the final dot size, and the dot position, thus driving the process toward partial self-order. We numerically evaluate the relative dispersion of surface coverage for several gate areas and compare the results to the fully random case. The coverage dispersion is related to the fluctuations from bit to bit of the threshold voltage window (Δ Vth) distribution of nanocrystal memories. The evaluations, com…

Materials scienceSiliconQuantum dotsbusiness.industryNucleationGeneral Physics and Astronomychemistry.chemical_elementWindow (computing)NanotechnologyChemical vapor depositionCondensed Matter::Mesoscopic Systems and Quantum Hall EffectSettore ING-INF/01 - Elettronicanon volatile memoriesSettore FIS/03 - Fisica Della Materiachemical vapor depositionThreshold voltageDistribution (mathematics)chemistryNanocrystalnanoelectronic devicesscaling lawsDispersion (optics)OptoelectronicsbusinessJournal of Applied Physics
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Localized charge storage in nanocrystal memories: Feasibility of a multi-bit cell

2004

We have realized Si nanocrystal memory cells in which the Si dots have been deposited by chemical vapor deposition (CVD) on the tunnel oxide and then covered by a CVD control oxide. In this paper we report a study on the potential of this type of cells for multi-bit storage. In particular, the possibilities offered by these devices from the point of view of program/erase mechanisms, endurance, and charge retention are shown and discussed.

Bit cellMaterials scienceSiliconOxidechemistry.chemical_elementNanotechnologyCharge (physics)Chemical vapor depositionSettore ING-INF/01 - Elettronicachemistry.chemical_compoundNanoelectronicsNanocrystalchemistryElectrical and Electronic EngineeringSafety Risk Reliability and QualityCharge retention
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