6533b85bfe1ef96bd12bab6f

RESEARCH PRODUCT

Localized charge storage in nanocrystal memories: Feasibility of a multi-bit cell

G. AmmendolaV. AncaraniB. De SalvoG. MolasD. CorsoSalvatore LombardoIsodiana CrupiL. PerniolaCosimo Gerardi

subject

Bit cellMaterials scienceSiliconOxidechemistry.chemical_elementNanotechnologyCharge (physics)Chemical vapor depositionSettore ING-INF/01 - Elettronicachemistry.chemical_compoundNanoelectronicsNanocrystalchemistryElectrical and Electronic EngineeringSafety Risk Reliability and QualityCharge retention

description

We have realized Si nanocrystal memory cells in which the Si dots have been deposited by chemical vapor deposition (CVD) on the tunnel oxide and then covered by a CVD control oxide. In this paper we report a study on the potential of this type of cells for multi-bit storage. In particular, the possibilities offered by these devices from the point of view of program/erase mechanisms, endurance, and charge retention are shown and discussed.

yearjournalcountryeditionlanguage
2004-03-22
10.1109/essderc.2003.1256818http://hdl.handle.net/10447/179608