0000000000008985

AUTHOR

V. Ancarani

showing 3 related works from this author

Nanocrystal memories for FLASH device applications

2004

Nanocrystals memory cells, in which the conventional polysilicon floating gate is replaced by an array of silicon nanocrystals, have been fabricated and characterized. Single cells and cell arrays of 1 Mb and 10 k have been realized by using a conventional 0.15 μm FLASH technology. Si nanocrystals are deposited on top of tunnel oxide by chemical vapor deposition. Properties of the memory cell have been investigated both for NAND and NOR applications in terms of program/erase window and programming times. Suitable program/erase threshold voltage window can be achieved with fast voltage pulses by adequate choice of tunnel and control dielectric. The feasibility of dual bit storage is also pro…

Materials sciencebusiness.industryElectronic Optical and Magnetic MaterialNAND gateNanotechnologyChemical vapor depositionNanocrystalReliabilityCondensed Matter PhysicsFlash memorySettore ING-INF/01 - ElettronicaFlash memoryElectronic Optical and Magnetic MaterialsThreshold voltageFlash (photography)NanocrystalMemory cellHardware_GENERALCharge trap flashMaterials ChemistryHardware_INTEGRATEDCIRCUITSOptoelectronicsElectrical and Electronic Engineeringbusiness
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How far will Silicon nanocrystals push the scaling limits of NVMs technologies?

2004

For the first time, memory devices with optimized high density (2E12#/cm/sup 2/) LPCVD Si nanocrystals have been reproducibly achieved and studied on an extensive statistical basis (from single cell up to 1 Mb test-array) under different programming conditions. An original experimental and theoretical analysis of the threshold voltage shift distribution shows that Si nanocrystals have serious potential to push the scaling of NOR and NAND flash at least to the 35 nm and 65 nm nodes, respectively.

Materials sciencesezeleSiliconbusiness.industryNAND gatechemistry.chemical_elementNanotechnologyChemical vapor depositionSettore ING-INF/01 - ElettronicaThreshold voltageNanocrystalNanoelectronicschemistryOptoelectronicsElectrical and Electronic EngineeringbusinessScience technology and societyScaling
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Localized charge storage in nanocrystal memories: Feasibility of a multi-bit cell

2004

We have realized Si nanocrystal memory cells in which the Si dots have been deposited by chemical vapor deposition (CVD) on the tunnel oxide and then covered by a CVD control oxide. In this paper we report a study on the potential of this type of cells for multi-bit storage. In particular, the possibilities offered by these devices from the point of view of program/erase mechanisms, endurance, and charge retention are shown and discussed.

Bit cellMaterials scienceSiliconOxidechemistry.chemical_elementNanotechnologyCharge (physics)Chemical vapor depositionSettore ING-INF/01 - Elettronicachemistry.chemical_compoundNanoelectronicsNanocrystalchemistryElectrical and Electronic EngineeringSafety Risk Reliability and QualityCharge retention
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