0000000000075520
AUTHOR
Maria Kastriotou
showing 8 related works from this author
Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies
2021
Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench and double-trench architectures. The results were used to calculate the failure cross-sections and the failure in time (FIT) rates at sea level. Enhanced gate and drain leakage were observed in some devices which did not exhibit a destructive failure during the exposure. In particular, a different mechanism was observed for planar and trench gate MOSFETs, the first showing a partial gate rupture with a leakage path mostly between drain and gate, similar to what was previously observed with heavy-ions, while the second exhibiting a complete gate rupture. The observed fail…
Mechanisms of Electron-Induced Single-Event Upsets in Medical and Experimental Linacs
2018
In this paper, we perform an in-depth analysis of the single-event effects observed during testing at medical electron linacs and an experimental high-energy electron linac. For electron irradiations, the medical linacs are most commonly used due to their availability and flexibility. Whereas previous efforts were made to characterize the cross sections at higher energies, where the nuclear interaction cross section is higher, the focus of this paper is on the complete overview of relevant electron energies. Irradiations at an electron linac were made with two different devices, with a large difference in feature size. The irradiations at an experimental linac were performed with varying en…
Emulating the Effects of Radiation-Induced Soft-Errors for the Reliability Assessment of Neural Networks
2021
International audience; Convolutional Neural Networks (CNNs) are currently one of the most widely used predictive models in machine learning. Recent studies have demonstrated that hardware faults induced by radiation fields, including cosmic rays, may significantly impact the CNN inference leading to wrong predictions. Therefore, ensuring the reliability of CNNs is crucial, especially for safety-critical systems. In the literature, several works propose reliability assessments of CNNs mainly based on statistically injected faults. This work presents a software emulator capable of injecting real faults retrieved from radiation tests. Specifically, from the device characterisation of a DRAM m…
Direct Ionization Impact on Accelerator Mixed-Field Soft-Error Rate
2020
We investigate, through measurements and simulations, the possible direct ionization impact on the accelerator soft-error rate (SER), not considered in standard qualification approaches. Results show that, for a broad variety of state-of-the-art commercial components considered in the 65-16-nm technological range, indirect ionization is still expected to dominate the overall SER in the accelerator mixed-field. However, the derived critical charges of the most sensitive parts, corresponding to ~0.7 fC, are expected to be at the limit of rapid direct ionization dominance and soft-error increase.
Measurements of Low-Energy Protons using a Silicon Detector for Application to SEE Testing
2021
A silicon detector with a fast electronics chain is used for the dosimetry of protons in the range 0.5-5 MeV at the Centro Nacional de Aceleradores (CNA) 3 MV Tandem laboratory in Seville, Spain. In this configuration, measurements can be performed in pulsed mode, using a digitizer to record event-by-event proton energy depositions. The distributions of deposited energy were obtained thanks to a calibration with an alpha source. Measurements of flux and deposited energy are used to enable single event effect (SEE) testing on selected static random access memories (SRAMs).
SEU characterization of commercial and custom-designed SRAMs based on 90 nm technology and below
2020
International audience; The R2E project at CERN has tested a few commercial SRAMs and a custom-designed SRAM, whose data are complementary to various scientific publications. The experimental data include low- and high-energy protons, heavy ions, thermal, intermediate- and high-energy neutrons, high-energy electrons and high-energy pions.
Technology Impact on Neutron-Induced Effects in SDRAMs : A Comparative Study
2021
International audience; This study analyses the response of synchronous dynamic random access memories to neutron irradiation. Three different generations of the same device with different node sizes (63, 72, and 110 nm) were characterized under an atmospheric-like neutron spectrum at the ChipIr beamline in the Rutherford Appleton Laboratories, UK. The memories were tested with a reduced refresh rate to expose more single-event upsets and under similar conditions provided by a board specifically developed for this type of study in test facilities. The board has also been designed to be used as a nanosatellite payload in order to perform similar tests. The neutron-induced failures were studi…
Mechanisms of Electron-Induced Single Event Upsets in Medical and Experimental Linacs
2018
In this paper, we perform an in-depth analysis of the single-event effects observed during testing at medical electron linacs and an experimental high-energy electron linac. For electron irradiations, the medical linacs are most commonly used due to their availability and flexibility. Whereas previous efforts were made to characterize the cross sections at higher energies, where the nuclear interaction cross section is higher, the focus of this paper is on the complete overview of relevant electron energies. Irradiations at an electron linac were made with two different devices, with a large difference in feature size. The irradiations at an experimental linac were performed with varying en…