6533b7cffe1ef96bd1258efc
RESEARCH PRODUCT
Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies
Arto JavanainenC. MartinellaR. GaillardRoger StarkYacine KadiMaria KastriotouCarlo CazzanigaAndrea CoronettiRuben Garcia AliaUlrike Grossnersubject
Nuclear and High Energy PhysicsMaterials sciencepower MOSFETs01 natural sciences7. Clean energyelektroniikkakomponentitStress (mechanics)chemistry.chemical_compoundReliability (semiconductor)silicon carbidepuolijohteet0103 physical sciencesMOSFETSilicon carbideElectrical and Electronic EngineeringPower MOSFETSilicon Carbide; Power MOSFETs; neutrons; Single Event Effects; Single Event Burnout; gate damagesingle event burnoutLeakage (electronics)010308 nuclear & particles physicsbusiness.industrygate damageneutronsneutronitsingle event effectssäteilyfysiikkaNuclear Energy and EngineeringchemistryLogic gateTrenchtransistoritOptoelectronicsOtherbusinessdescription
Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench and double-trench architectures. The results were used to calculate the failure cross-sections and the failure in time (FIT) rates at sea level. Enhanced gate and drain leakage were observed in some devices which did not exhibit a destructive failure during the exposure. In particular, a different mechanism was observed for planar and trench gate MOSFETs, the first showing a partial gate rupture with a leakage path mostly between drain and gate, similar to what was previously observed with heavy-ions, while the second exhibiting a complete gate rupture. The observed failure mechanisms and the post irradiation gate stress (PIGS) tests are discussed for the different technologies. ISSN:0018-9499 ISSN:1558-1578
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2021-05-01 | IEEE Transactions on Nuclear Science |