0000000000075518

AUTHOR

Roger Stark

showing 3 related works from this author

Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies

2021

Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench and double-trench architectures. The results were used to calculate the failure cross-sections and the failure in time (FIT) rates at sea level. Enhanced gate and drain leakage were observed in some devices which did not exhibit a destructive failure during the exposure. In particular, a different mechanism was observed for planar and trench gate MOSFETs, the first showing a partial gate rupture with a leakage path mostly between drain and gate, similar to what was previously observed with heavy-ions, while the second exhibiting a complete gate rupture. The observed fail…

Nuclear and High Energy PhysicsMaterials sciencepower MOSFETs01 natural sciences7. Clean energyelektroniikkakomponentitStress (mechanics)chemistry.chemical_compoundReliability (semiconductor)silicon carbidepuolijohteet0103 physical sciencesMOSFETSilicon carbideElectrical and Electronic EngineeringPower MOSFETSilicon Carbide; Power MOSFETs; neutrons; Single Event Effects; Single Event Burnout; gate damagesingle event burnoutLeakage (electronics)010308 nuclear & particles physicsbusiness.industrygate damageneutronsneutronitsingle event effectssäteilyfysiikkaNuclear Energy and EngineeringchemistryLogic gateTrenchtransistoritOptoelectronicsOtherbusinessIEEE Transactions on Nuclear Science
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Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs

2020

Heavy-ion microbeams are employed for probing the radiation-sensitive regions in commercial silicon carbide (SiC) vertical double-diffused power (VD)-MOSFETs with micrometer accuracy. By scanning the beam spot over the die, a spatial periodicity was observed in the leakage current degradation, reflecting the striped structure of the power MOSFET investigated. Two different mechanisms were observed for degradation. At low drain bias (gate and source grounded), only the gate-oxide (at the JFET or neck region) is contributing in the ion-induced leakage current. For exposures at drain–source bias voltages higher than a specific threshold, additional higher drain leakage current is observed in t…

Nuclear and High Energy PhysicsMaterials sciencemicrobeamsilicon carbide (SiC) vertical double-diffused power(VD)-MOSFETleakage current degradation01 natural sciencesDie (integrated circuit)chemistry.chemical_compoundpuolijohteet0103 physical sciencesMOSFETSilicon carbideNuclear Physics - ExperimentPower semiconductor deviceElectrical and Electronic EngineeringPower MOSFETsingle-event effect (SEE)010308 nuclear & particles physicsbusiness.industryionisoiva säteilyHeavy ion; leakage current degradation; microbeam; silicon carbide (SiC) vertical double-diffused power(VD)-MOSFET; single-event effect (SEE); single-event leakage current (SELC)JFETSELCMicrobeamSiC VD-MOSFET620single event effectsäteilyfysiikkaNuclear Energy and Engineeringchemistryheavy-ionOptoelectronicsddc:620Heavy ionbusinesssingle-event leakage current (SELC)Voltage
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Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs

2019

IEEE Transactions on Nuclear Science, 66 (7)

Nuclear and High Energy PhysicsMaterials scienceSiC power MOSFETsheavy ion irradiationComputerApplications_COMPUTERSINOTHERSYSTEMS01 natural scienceselektroniikkakomponentitchemistry.chemical_compoundMOSFETgate leakageGate oxidesilicon carbide0103 physical sciencesMOSFETSilicon carbideIrradiationElectrical and Electronic EngineeringPower MOSFETLeakage (electronics)leakage currentsionit010308 nuclear & particles physicsbusiness.industryionisoiva säteilysingle event effectspilaantuminenNuclear Energy and EngineeringchemistrysäteilyfysiikkaLogic gatelogic gatesradiation effectstransistoritOptoelectronicsbusinessAND gate
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