0000000000075517
AUTHOR
R. Gaillard
Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies
Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench and double-trench architectures. The results were used to calculate the failure cross-sections and the failure in time (FIT) rates at sea level. Enhanced gate and drain leakage were observed in some devices which did not exhibit a destructive failure during the exposure. In particular, a different mechanism was observed for planar and trench gate MOSFETs, the first showing a partial gate rupture with a leakage path mostly between drain and gate, similar to what was previously observed with heavy-ions, while the second exhibiting a complete gate rupture. The observed fail…
Direct Ionization Impact on Accelerator Mixed-Field Soft-Error Rate
We investigate, through measurements and simulations, the possible direct ionization impact on the accelerator soft-error rate (SER), not considered in standard qualification approaches. Results show that, for a broad variety of state-of-the-art commercial components considered in the 65-16-nm technological range, indirect ionization is still expected to dominate the overall SER in the accelerator mixed-field. However, the derived critical charges of the most sensitive parts, corresponding to ~0.7 fC, are expected to be at the limit of rapid direct ionization dominance and soft-error increase.
Direct Ionization Impact on Accelerator Mixed-Field Soft Error Rate
We investigate, through measurements and simulations, the possible direct ionization impact in the accelerator soft error rate, not considered in standard qualification approaches. Results show that, for a broad variety of state-of-the art commercial components considered in the 65 nm to 16 nm technological range, indirect ionization is still expected to dominate the overall soft-error rate in the accelerator mixed-field. However, the derived critical charges of the most sensitive parts, corresponding to ∼0.7 fC, are expected to be at the limit of rapid direct ionization dominance and soft-error increase. peerReviewed