0000000000083269
AUTHOR
J. L. Pedroza
Precision measurement of the half-life and the decay branches of 62Ga
In an experiment performed at the Accelerator Laboratory of the University of Jyvaskyla, the beta-decay half-life of 62Ga has been studied with high precision using the IGISOL technique. A half-life of T1/2 = 116.09(17)ms was measured. Using beta-gamma coincidences, the gamma intensity of the 954keV transition and an upper limit of the beta-decay feeding of the 0+_2 state have been extracted. The present experimental results are compared to previous measurements and their impact on our understanding of the weak interaction is discussed.
Precise half-life measurement of the Si-26 ground state
The beta-decay half-life of 26Si was measured with a relative precision of 1.4*10e3. The measurement yields a value of 2.2283(27) s which is in good agreement with previous measurements but has a precision that is better by a factor of 4. In the same experiment, we have also measured the non-analogue branching ratios and could determine the super-allowed one with a precision similar to the previously reported measurements. The experiment was done at the Accelerator Laboratory of the University of Jyvaskyla where we used the IGISOL technique with the JYFLTRAP facility to separate pure samples of 26Si.