6533b828fe1ef96bd12879d7
RESEARCH PRODUCT
Precise half-life measurement of the Si-26 ground state
A. JokinenAntti SaastamoinenJ. L. PedrozaP. DelahayeJ. RonkainenTommi EronenJ. HuikariT. SonodaJ. GiovinazzoJuho RissanenS. RahamanI. MateaJ. SouinJ. SouinChristine WeberI. D. MooreUlrike HagerJ. HakalaBertram BlankViki-veikko ElomaaJ. ÄYstöAnu Kankainensubject
PhysicsNuclear and High Energy PhysicsBranching fraction010308 nuclear & particles physicsFOS: Physical sciencesHalf-life01 natural sciencesNuclear physics0103 physical sciencesRelative precisionNuclear Experiment (nucl-ex)010306 general physicsGround stateNuclear ExperimentNuclear Physicsdescription
The beta-decay half-life of 26Si was measured with a relative precision of 1.4*10e3. The measurement yields a value of 2.2283(27) s which is in good agreement with previous measurements but has a precision that is better by a factor of 4. In the same experiment, we have also measured the non-analogue branching ratios and could determine the super-allowed one with a precision similar to the previously reported measurements. The experiment was done at the Accelerator Laboratory of the University of Jyvaskyla where we used the IGISOL technique with the JYFLTRAP facility to separate pure samples of 26Si.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2008-11-01 |