0000000000115863

AUTHOR

Väinö Hänninen

showing 3 related works from this author

Advanced time-stamped total data acquisition control front-end for MeV ion beam microscopy and proton beam writing

2013

Many ion-matter interactions exhibit [email protected] time dependences such as, fluorophore emission quenching and ion beam induced charge (IBIC). Conventional event-mode MeV ion microbeam data acquisition systems discard the time information. Here we describe a fast time-stamping data acquisition front-end based on the concurrent processing capabilities of a Field Programmable Gate Array (FPGA). The system is intended for MeV ion microscopy and MeV ion beam lithography. The speed of the system (>240,000 events s^-^1 for four analogue to digital converters (ADC)) is limited by the ADC throughput and data handling speed of the host computer.

Materials scienceIon beamta221Analytical chemistryHardware_PERFORMANCEANDRELIABILITYIon beam lithographyProton beam writingFront and back endsComputer Science::Hardware ArchitectureData acquisitionOpticsMicroscopyHardware_INTEGRATEDCIRCUITSElectrical and Electronic EngineeringField-programmable gate arrayHardware_REGISTER-TRANSFER-LEVELIMPLEMENTATIONta114business.industryta1182MicrobeamCondensed Matter PhysicsAtomic and Molecular Physics and OpticsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsPhysics::Accelerator PhysicsbusinessMicroelectronic Engineering
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Development of the Jyväskylä microbeam facility

2012

Abstract A new microbeam facility is being constructed at the 1.7 MV Pelletron Accelerator in Jyvaskyla. The facility is designed for easy upgrading and incorporates a number of innovative features. Initially, it is based on a Heidelberg doublet with a design capability of a 3 × 5 μm beamspot at PIXE intensities and later upgraded to nanobeam performance. A thermal-expansion compensated rigid frame mounted on a mechanically isolated floor section is used to support the ion optical components. A compact-post focusing electrostatic deflector is used for high linearity beam scanning. This together with a novel time-stamped data collection (TDC) allows dynamic effects in IBIC, fluorescence blea…

Nuclear and High Energy PhysicsMaterials scienceta114business.industryRigid frameDetectorSolid angleMicrobeamSecondary electronsIonlaw.inventionPelletronOpticsOptical microscopelawbusinessInstrumentationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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The first results with the new JYFL 14 GHz ECR ion source

2001

Abstract A new 14 GHz ECR ion source has been built for the Accelerator Laboratory in the Department of Physics (JYFL), University of Jyvaskyla. This source belongs to the family of the LBNL AECR-U-based ECR ion sources. The operation during the first four months has shown that the new ion source performs well and is able to produce intensive highly charged ion beams. For example, 145 μA of O7+ ion beam was recorded. The production of iron and boron ion beams was tested using the MIVOC method. The 56Fe11+ ion beam current reached a value of 115 μA. The intensities of 11B3+ and 11B5+ ion beams were 235 and 52 μA, respectively. This iron beam intensity is the second highest and the boron beam…

Nuclear and High Energy PhysicsIon beam depositionIon beamchemistryHighly charged ionchemistry.chemical_elementAtomic physicsBoronInstrumentationBeam (structure)Ion sourceIonVoltageNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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