0000000000121556
AUTHOR
Alain Billard
showing 3 related works from this author
Controlled thermal oxidation of nanostructured vanadium thin films
2016
Abstract Pure V thin films were dc sputtered with different pressures (0.4 and 0.6 Pa) and particle incident angles α of 0°, 20° and 85°, by using the GLancing Angle Deposition (GLAD) technique. The sputtered films were characterized regarding their electrical resistivity behaviour in atmospheric pressure and in-vacuum conditions as a function of temperature (40–550 °C), in order to control the oxidation process. Aiming at comprehending the oxidation behaviour of the samples, extensive morphological and structural studies were performed on the as-deposited and annealed samples. Main results show that, in opposition to annealing in air, the columnar nanostructures are preserved in vacuum con…
Manufacturing and testing of a metal supported Ni-YSZ/YSZ/La2NiO4 IT-SOFC synthesized by physical surface deposition processes
2017
International audience; The manufacture of the last generation metal supported IT-SOFC complete cell by dry surface deposition pro-cesses is really challenging. Atmospheric Plasma Spraying (APS) and Reactive Magnetron Sputtering (RMS) processes are respectively adapted to deposit Ni-YSZ anode and YSZ electrolyte layers. RMS is also used to coat a thin and dense La2NiO4 (LNO) cathode layer. In this work, we have realized a complete cell on metallic support (ITM) produced by PLANSEE SE. The innovative LNO cathode layer was compared with screen-printed LNO layers, with and without RMS bonding layer. Electrochemical and Voltammetry tests were performed on these samples. It reveals lower perform…
Tungsten oxide thin films sputter deposited by the reactive gas pulsing process for the dodecane detection
2015
International audience; The DC reactive magnetron sputtering of a metallic tungsten target was performed in an argon + oxygen atmosphere for depositing tungsten oxide thin films. In order to control the oxygen concentration in the films, the reactive gas pulsing process, namely RGPP, was implemented. Rectangular pulses were used with a constant pulsing period T = 16 s whereas the duty cycle α (time of oxygen injection to pulsing period T ratio) was systematically changed from 0 to 100% of T. This pulsing injection of the reactive gas allowed a gradual evolution of the films composition from pure metallic to over-stoichiometric WO3+ɛ’ compounds. These WOx films were sputter deposited on comm…