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RESEARCH PRODUCT
Controlled thermal oxidation of nanostructured vanadium thin films
Alain BillardP. PedrosaNicolas MartinRoland SalutMohammad Arab Pour Yazdisubject
010302 applied physicsThermal oxidationMaterials scienceNanostructureAtmospheric pressureAnnealing (metallurgy)Mechanical EngineeringMetallurgyVanadiumchemistry.chemical_element02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesVanadium oxidechemistryMechanics of MaterialsElectrical resistivity and conductivity0103 physical sciencesGeneral Materials ScienceThin filmComposite material0210 nano-technologydescription
Abstract Pure V thin films were dc sputtered with different pressures (0.4 and 0.6 Pa) and particle incident angles α of 0°, 20° and 85°, by using the GLancing Angle Deposition (GLAD) technique. The sputtered films were characterized regarding their electrical resistivity behaviour in atmospheric pressure and in-vacuum conditions as a function of temperature (40–550 °C), in order to control the oxidation process. Aiming at comprehending the oxidation behaviour of the samples, extensive morphological and structural studies were performed on the as-deposited and annealed samples. Main results show that, in opposition to annealing in air, the columnar nanostructures are preserved in vacuum conditions, keeping metallic-like electrical properties.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2016-07-01 | Materials Letters |