0000000000121558

AUTHOR

Mohammad Arab Pour Yazdi

showing 3 related works from this author

Controlled thermal oxidation of nanostructured vanadium thin films

2016

Abstract Pure V thin films were dc sputtered with different pressures (0.4 and 0.6 Pa) and particle incident angles α of 0°, 20° and 85°, by using the GLancing Angle Deposition (GLAD) technique. The sputtered films were characterized regarding their electrical resistivity behaviour in atmospheric pressure and in-vacuum conditions as a function of temperature (40–550 °C), in order to control the oxidation process. Aiming at comprehending the oxidation behaviour of the samples, extensive morphological and structural studies were performed on the as-deposited and annealed samples. Main results show that, in opposition to annealing in air, the columnar nanostructures are preserved in vacuum con…

010302 applied physicsThermal oxidationMaterials scienceNanostructureAtmospheric pressureAnnealing (metallurgy)Mechanical EngineeringMetallurgyVanadiumchemistry.chemical_element02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesVanadium oxidechemistryMechanics of MaterialsElectrical resistivity and conductivity0103 physical sciencesGeneral Materials ScienceThin filmComposite material0210 nano-technologyMaterials Letters
researchProduct

Detection of Indoor Air Pollutants Using Reactive Sputtering/GLAD of Tin Oxide Thin Films

2021

-

[SPI.ACOU] Engineering Sciences [physics]/Acoustics [physics.class-ph][SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics[SPI.MAT] Engineering Sciences [physics]/MaterialsThe 1st International Electronic Conference on Chemical Sensors and Analytical Chemistry
researchProduct

Tungsten oxide thin films sputter deposited by the reactive gas pulsing process for the dodecane detection

2015

International audience; The DC reactive magnetron sputtering of a metallic tungsten target was performed in an argon + oxygen atmosphere for depositing tungsten oxide thin films. In order to control the oxygen concentration in the films, the reactive gas pulsing process, namely RGPP, was implemented. Rectangular pulses were used with a constant pulsing period T = 16 s whereas the duty cycle α (time of oxygen injection to pulsing period T ratio) was systematically changed from 0 to 100% of T. This pulsing injection of the reactive gas allowed a gradual evolution of the films composition from pure metallic to over-stoichiometric WO3+ɛ’ compounds. These WOx films were sputter deposited on comm…

[SPI.ACOU]Engineering Sciences [physics]/Acoustics [physics.class-ph][PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics]ArgonMaterials scienceDodecane020502 materials[INFO.INFO-DS]Computer Science [cs]/Data Structures and Algorithms [cs.DS]Analytical chemistrychemistry.chemical_element02 engineering and technology021001 nanoscience & nanotechnologyOxygen[SPI.AUTO]Engineering Sciences [physics]/Automatic[SPI.MAT]Engineering Sciences [physics]/Materialschemistry.chemical_compound0205 materials engineeringchemistrySputteringDuty cycleDeposition (phase transition)Limiting oxygen concentrationThin film[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics0210 nano-technology
researchProduct