An AC-assisted single-nanowire electromechanical switch
A unique two-source controlled nanoelectromechanical switch has been assembled from individual, single-clamped Ge nanowires. The switching behaviour was achieved by superimposing the control signals of specific frequencies to the electrostatic potential of the output terminals, eliminating the need for an additional gate electrode. Using an in situ manipulation technique inside a scanning electron microscope, we demonstrate that the pull-out force required to overcome adhesion at the contact can be significantly reduced by exciting mechanical resonant modes within the nanowire.
Determination of Young’s modulus of Sb2S3 nanowires by in situ resonance and bending methods
In this study we address the mechanical properties of Sb2S3 nanowires and determine their Young’s modulus using in situ electric-field-induced mechanical resonance and static bending tests on individual Sb2S3 nanowires with cross-sectional areas ranging from 1.1·104 nm2 to 7.8·104 nm2. Mutually orthogonal resonances are observed and their origin explained by asymmetric cross section of nanowires. The results obtained from the two methods are consistent and show that nanowires exhibit Young’s moduli comparable to the value for macroscopic material. An increasing trend of measured values of Young’s modulus is observed for smaller thickness samples.
Investigating the mechanical properties of GeSn nanowires.
Germanium tin (GeSn) has been proposed as a promising material for electronic and optical applications due to the formation of a direct band-gap at a Sn content >7 at%. Furthermore, the ability to manipulate the properties of GeSn at the nanoscale will further permit the realisation of advanced mechanical devices. Here we report for the first time the mechanical properties of GeSn nanowires (7.1-9.7 at% Sn) and assess their suitability as nanoelectromechanical (NEM) switches. Electron microscopy analysis showed the nanowires to be single crystalline, with surfaces covered by a thin native amorphous oxide layer. Mechanical resonance and bending tests at different boundary conditions were use…
Space charge limited current mechanism in Bi2S3 nanowires
We report on the charge transport properties of individual Bi2S3 nanowires grown within the pores of anodized aluminum oxide templates. The mean pore diameter was 80 nm. Space charge limited current is the dominating conduction mechanism at temperatures below 160 K. Characteristic parameters of nanowires, such as trap concentration and trap characteristic energy, were estimated from current-voltage characteristics at several temperatures.
Application of Ge Nanowire for Two-Input Bistable Nanoelectromechanical Switch
Recently, several research groups presented bistable two-terminal nanoelectromechanical switches based on individual single-clamped active element. All presented devices had one input electrode. Similar devices having two or more input electrodes have not been yet investigated. In this work we present the two-input bistable controlled nanoelectromechanical switch based on an individual single-clamped Ge nanowire. The switch is realised using in-situ SEM technique and operating due to balancing of electrostatic, adhesion and elastic forces. The operation conditions of the device are investigated and presented. The advantages and drawbacks of the device are discussed. DOI: http://dx.doi.org/1…
Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches.
Electrostatically actuated nanobeam-based electromechanical switches have shown promise for versatile novel applications, such as low power devices. However, their widespread use is restricted due to poor reliability resulting from high jump-in voltages. This article reports a new method for lowering the jump-in voltage by inducing mechanical oscillations in the active element during the switching ON process, reducing the jump-in voltage by more than three times. Ge0.91Sn0.09 alloy and Bi2Se3 nanowire-based nanoelectromechanical switches were constructed in situ to demonstrate the operation principles and advantages of the proposed method.
Electric current induced modification of germanium nanowire NEM switch contact.
We present an investigation of contact properties of a germanium (Ge) nanowire based nanoelectromechanical (NEM) switch in its ON state. The contact stiffness in the ON state was evaluated by detecting the nanowire's resonance frequency. It was found that the resonance frequency increases when electric current flows through the nanowire/counter electrode contact area. The reason for modification in the contact area is referred to as electric-current-induced processes in the native oxide layer covering the nanowires. The presented resonance shift method is a simple way to indicate strengthening of the nanowire/counter electrode contact area without disassembling the contact.