6533b85efe1ef96bd12bf418
RESEARCH PRODUCT
Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches.
Donats ErtsJana AndzaneAlexander I. LivshitsJelena KosmacaJustin D. HolmesLiga JasulanecaRaimonds MeijaSubhajit Biswassubject
Materials scienceNanowireBioengineering02 engineering and technology010402 general chemistry01 natural sciencesResonanceNEMSReliability (semiconductor)General Materials SciencePower semiconductor deviceElectrical and Electronic EngineeringNanoelectromechanical systemsVoltage reductionbusiness.industryMechanical EngineeringResonanceBi2Se3General ChemistrySwitch021001 nanoscience & nanotechnology0104 chemical sciencesNanowireGeSnMechanics of MaterialsOptoelectronics0210 nano-technologyDriven elementbusinessVoltagedescription
Electrostatically actuated nanobeam-based electromechanical switches have shown promise for versatile novel applications, such as low power devices. However, their widespread use is restricted due to poor reliability resulting from high jump-in voltages. This article reports a new method for lowering the jump-in voltage by inducing mechanical oscillations in the active element during the switching ON process, reducing the jump-in voltage by more than three times. Ge0.91Sn0.09 alloy and Bi2Se3 nanowire-based nanoelectromechanical switches were constructed in situ to demonstrate the operation principles and advantages of the proposed method.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2019-07-08 | Nanotechnology |