Devices based on semiconductor nanowires
Recently, nanoelectromechanical systems (NEMS) have attracted much attention due to their unique properties and possible applications that differ greatly from those of microelectromechanical systems. NEMS operating frequencies may achieve giga- and terahertz levels and their power consumption and heat capacity is extremely low. Moreover, integration levels may reach 1012 devices per cm−2. In this review, we present techniques for integrating semiconductor materials in NEMS. In particular, we examine fabrication, structure, properties and potential applications of two main classes of NEMS, namely, resonators and switches.
An AC-assisted single-nanowire electromechanical switch
A unique two-source controlled nanoelectromechanical switch has been assembled from individual, single-clamped Ge nanowires. The switching behaviour was achieved by superimposing the control signals of specific frequencies to the electrostatic potential of the output terminals, eliminating the need for an additional gate electrode. Using an in situ manipulation technique inside a scanning electron microscope, we demonstrate that the pull-out force required to overcome adhesion at the contact can be significantly reduced by exciting mechanical resonant modes within the nanowire.
Sensing properties of assembled Bi2S3nanowire arrays
Bismuth sulfide (Bi2S3) nanowires were grown in porous aluminium oxide template and a selective chemical etching was applied to transfer the nanowires to a solution. Well aligned nanowire arrays were assembled on pre-patterned silicon substrates employing dielectrophoresis. Electron beam lithography was used to connect aligned individual nanowires to the common macroelectrode. In order to evaluate the conductometric sensing performance of the Bi2S3 nanowires, current–voltage characteristics were measured at different relative humidity (RH) levels (5–80%) / argon medium. The response of the Bi2S3 nanowires depending of RH is found to be considerably different from those reported for other ty…
Probing of nanocontacts inside a transmission electron microscope
In the past twenty years, powerful tools such as atomic force microscopy have made it possible to accurately investigate the phenomena of friction and wear, down to the nanometer scale. Readers of this book will become familiar with the concepts and techniques of nanotribology, explained by an international team of scientists and engineers, actively involved and with long experience in this field. Edited by two pioneers in the field, 'Fundamentals of Frictions and Wear at the Nanoscale' is suitable both as first introduction to this fascinating subject, and also as a reference for researchers wishing to improve their knowledge of nanotribology and to keep up with the latest results in this …
Photoconductivity of Germanium Nanowire Arrays Incorporated in Anodic Aluminum Oxide
Photoconductivity of germanium nanowire arrays of 50 and 100 nm diameter incorporated into Anodic Aluminum Oxide (AAO) membranes illuminated with visible light is investigated. Photocurrent response to excitation radiation with time constants faster than 10−4 s were governed by absorption of incident light by nanowires, while photokinetics with time constants of the order of 10−3 s originates from the photoluminescence of the AAO matrix. Possible applications of nanowire arrays inside AAO as photoresistors are discussed.
Probing the magnetic properties of cobalt–germanium nanocable arrays
We report the synthesis of high density arrays of coaxial nanocables, consisting of germanium nanowires surrounded by cobalt nanotube sheaths, within anodic aluminium oxide membranes. The nanocable arrays were prepared using a supercritical fluid inclusion process, whereby the cobalt nanotubes were first deposited on the pore walls of the nanoporous membranes and subsequently filled with germanium to form coaxial nanocables. The composition and structure of the metal–semiconductor nanostructures was investigated by electron microscopy, energy dispersive X-ray mapping and X-ray diffraction at high angles. The magnetic properties of the co-axial nanocables were probed using a superconducting …
High-Density Arrays of Germanium Nanowire Photoresistors
Here we present for the first time a study of the photoresistive properties and dynamics of ordered, high-density arrays of germanium nanowire photoresistors. Germanium is a wellknown semiconducting material with an indirect bandgap, Eg, of approximately 0.66 eV (temperature T = 300 K) and has been widely used for the fabrication of photodetectors, radiation detectors, charged particle and photon tracking devices, far-infrared photoresistors, and numerous other devices. During the last few years there has also been increasing interest in the use of nanostructures (quantum dots and wires) of both germanium and silicon as materials for potential applications in sensors, nanophotonics, and nan…
The synthesis of matrices of embedded semiconducting nanowires.
In this work we report how single crystal nanowires can be assembled into regular arrays using mesoporous thin films to define the architecture. Mesoporous thin films were prepared by a sol-gel method. These provide films of very regular structure and dimensions. The films produced in this way have almost single crystal like structures and can also exhibit strong epitaxy to the underlying silicon substrate. The films are subjected to a supercritical fluid (SCF) environment in which a precursor is decomposed to yield nanowires of metals, semiconductors or oxides. Using these SCF conditions, pore filling is complete and the products are nanowires which are single crystals and structurally ali…
Conductive films of ordered nanowire arrays
peer-reviewed High-density, ordered arrays of germanium nanowires have been synthesised within the pores of mesoporous thin films (MTFs) and anodized aluminium oxide (AAO) matrices using a supercritical fluid solution-phase inclusion technique. Conductive atomic force microscopy (C-AFM) was utilised to study the electrical properties of the nanowires within these arrays. Nearly all of the semiconductor nanowires contained within the AAO substrates were found to be conducting. Additionally, each individual nanowire within the substrate possessed similar electrical properties demonstrating that the nanowires are continuous and reproducible within each pore. C-AFM was also able to probe the co…
Photoconductive properties of Bi2S3nanowires
The photoconductive properties of Bi2S3 nanowires synthesized inside anodized alumina (AAO) membrane have been characterized as a function of illuminating photon energy between the wavelengths of 500 to 900 nm and at constant illumination intensity of 1–4 μW·cm−2. Photoconductivity spectra, photocurrent values, photocurrent onset/decay times of individual Bi2S3 nanowires liberated from the AAO membrane were determined and compared with those of arrays of as-produced Bi2S3 nanowires templated inside pores of AAO membrane. The alumina membrane was found to significantly influence the photoconductive properties of the AAO-hosted Bi2S3 nanowires, when compared to liberated from the AAO membrane…
Synthesis and characterization of highly ordered cobalt-magnetite nanocable arrays.
Magnetically tunable, high-density arrays of coaxial nanocables within anodic aluminum oxide (AAO) membranes have been synthesized. The nanocables consist of magnetite nanowires surrounded by cobalt nanotube sheaths and cobalt nanowires surrounded by magnetite nanotube sheaths. These materials are a combination of separate hard (Co) and soft (Fe3O4) magnetic materials in a single nanocable structure. The combination of two or more magnetic materials in such a radial structure is seen as a very powerful tool for the future fabrication of magnetoresistive, spin-valve and ultrafast spin-injection devices with nonplanar geometries. The nanocable arrays were prepared using a supercritical-fluid …
Determination of Young’s modulus of Sb2S3 nanowires by in situ resonance and bending methods
In this study we address the mechanical properties of Sb2S3 nanowires and determine their Young’s modulus using in situ electric-field-induced mechanical resonance and static bending tests on individual Sb2S3 nanowires with cross-sectional areas ranging from 1.1·104 nm2 to 7.8·104 nm2. Mutually orthogonal resonances are observed and their origin explained by asymmetric cross section of nanowires. The results obtained from the two methods are consistent and show that nanowires exhibit Young’s moduli comparable to the value for macroscopic material. An increasing trend of measured values of Young’s modulus is observed for smaller thickness samples.
Extra tension at electrode-nanowire adhesive contacts in nano-electromechanical devices
Abstract We report a strong tangential component of the reaction force at electrode to nanowire adhesive contact which was previously established using electrostatic attraction. The reaction force tangential component absolute value was found to be comparable to or even bigger than the corresponding normal component. This effect is important for understanding of the mechanics of nano-electromechanical devices. Both the experiment and the corresponding theory are presented. Fitting of the obtained analytical solutions to experimental data was used to measure the reaction force acting at the contact for several nanowire-electrode configurations.
Two-terminal nanoelectromechanical devices based on germanium nanowires.
A two-terminal bistable device, having both ON and OFF regimes, has been demonstrated with Ge nanowires using an in situ TEM-STM technique. The function of the device is based on delicately balancing electrostatic, elastic, and adhesion forces between the nanowires and the contacts, which can be controlled by the applied voltage. The operation and failure conditions of the bistable device were investigated, i.e. the influence of nanowire diameter, the surface oxide layer on the nanowires and the current density. During ON/OFF cycles the Ge nanowires were observed to be more stable than carbon nanotubes, working at similar conditions, due to the higher mechanical stability of the nanowires. …
Investigating the mechanical properties of GeSn nanowires.
Germanium tin (GeSn) has been proposed as a promising material for electronic and optical applications due to the formation of a direct band-gap at a Sn content >7 at%. Furthermore, the ability to manipulate the properties of GeSn at the nanoscale will further permit the realisation of advanced mechanical devices. Here we report for the first time the mechanical properties of GeSn nanowires (7.1-9.7 at% Sn) and assess their suitability as nanoelectromechanical (NEM) switches. Electron microscopy analysis showed the nanowires to be single crystalline, with surfaces covered by a thin native amorphous oxide layer. Mechanical resonance and bending tests at different boundary conditions were use…
Space charge limited current mechanism in Bi2S3 nanowires
We report on the charge transport properties of individual Bi2S3 nanowires grown within the pores of anodized aluminum oxide templates. The mean pore diameter was 80 nm. Space charge limited current is the dominating conduction mechanism at temperatures below 160 K. Characteristic parameters of nanowires, such as trap concentration and trap characteristic energy, were estimated from current-voltage characteristics at several temperatures.
Application of Ge Nanowire for Two-Input Bistable Nanoelectromechanical Switch
Recently, several research groups presented bistable two-terminal nanoelectromechanical switches based on individual single-clamped active element. All presented devices had one input electrode. Similar devices having two or more input electrodes have not been yet investigated. In this work we present the two-input bistable controlled nanoelectromechanical switch based on an individual single-clamped Ge nanowire. The switch is realised using in-situ SEM technique and operating due to balancing of electrostatic, adhesion and elastic forces. The operation conditions of the device are investigated and presented. The advantages and drawbacks of the device are discussed. DOI: http://dx.doi.org/1…
Application of electrochemical impedance for characterising arrays of Bi2S3 nanowires
Abstract Electrochemical Impedance Spectroscopy (EIS) was used to characterise the electrical properties of bismuth sulphide (Bi2S3) nanowires (NWs) templated within anodic aluminium oxide (AAO) membranes. A specially engineered cell, with a nominal electrolyte volume of 0.1–0.2 ml, was used to hold and measure the electrochemical impedance of the fragile NW/AAO samples. An equivalent circuit model was developed to determine the filling density of nanowires within the porous templates. The EIS method can be utilised to probe the nanowire filling density in porous membranes over large sample areas, which is often unobtainable using electron microscopy and conductive atomic force microscopy t…
Impedance and admittance characteristics of Bi2S3 nanowire arrays
Current studies of the electrical impedance and admittance characteristics of the anodised aluminum oxide (AAO) nanoporous arrays and bismuth sulphide (Bi2S3) nanowire within AAO membranes are presented. The influence of potential and frequency scan rate effect produced on the real, imaginary and complex electrochemical impedance and double layer capacitance of the AAO nanopore and the Bi2S3 nanowire arrays were studied.
Relative Humidity Dependent Resistance Switching of Bi2S3Nanowires
Electrical properties of Bi2S3nanowires grown using a single source precursor in anodic aluminum oxide templates are sensitive to the relative humidity in an inert gas environment. Dynamic sensing dependency is obtained and shows presence of spontaneous resistance switching effect between low and high relative humidity states. Employing the thermionic field emission theory, heights of Schottky barriers are estimated from the current-voltage characteristics and in relation to the humidity response. The change of Schottky barrier height is explained by local changes in physically adsorbed water molecules on the surface of the nanowire.
Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches.
Electrostatically actuated nanobeam-based electromechanical switches have shown promise for versatile novel applications, such as low power devices. However, their widespread use is restricted due to poor reliability resulting from high jump-in voltages. This article reports a new method for lowering the jump-in voltage by inducing mechanical oscillations in the active element during the switching ON process, reducing the jump-in voltage by more than three times. Ge0.91Sn0.09 alloy and Bi2Se3 nanowire-based nanoelectromechanical switches were constructed in situ to demonstrate the operation principles and advantages of the proposed method.
Synthesis and characterisation of ordered arrays of mesoporous carbon nanofibres
A facile and reproducible one-step pathway has been developed for preparing ordered arrays of mesoporous carbon nanostructures within the pores of anodized aluminium oxide (AAO) membranes, through the confined self-assembly of phenol/formaldehyde resol and amphiphilic copolymer templates. The morphology of the mesoporous carbon nanostructures can be controlled by varying the copolymer surfactant, the quantity of the resol–surfactant precursor sol used and the amount of phenol–formaldehyde resol introduced into the resol–surfactant sol. One-dimensional (1-D) carbon nanostructures, such as carbon fibres with a core–shell structure and carbon ribbons with circular mesopores running parallel to…
<title>Metallic and semiconducting nanowires: properties and architectures</title>
Nanowires are expected to play an important role in future electronic, optical devices and nanoelectromechanical devices. Measuring the electrical and mechanical properties of nanowires is however a difficult task due to their small dimensions. Here we report the use of an in-situ microscopy technique, which combines transmission electron microscopy (TEM) with scanning probe microscopy (SPM), to investigate the electrical and mechanical properties of metallic and semiconductor nanowires. Additionally, in this paper we describe a novel approach for synthesizing mesoporous silicas with tunable pore diameters, wall thickness and pore spacings that can be used as tempates for the assembly of se…
Electric current induced modification of germanium nanowire NEM switch contact.
We present an investigation of contact properties of a germanium (Ge) nanowire based nanoelectromechanical (NEM) switch in its ON state. The contact stiffness in the ON state was evaluated by detecting the nanowire's resonance frequency. It was found that the resonance frequency increases when electric current flows through the nanowire/counter electrode contact area. The reason for modification in the contact area is referred to as electric-current-induced processes in the native oxide layer covering the nanowires. The presented resonance shift method is a simple way to indicate strengthening of the nanowire/counter electrode contact area without disassembling the contact.
A supercritical-fluid method for growing carbon nanotubes
Large‐scale generation of multiwalled carbon nanotubes (MCNTs) is efficiently achieved through a supercritical fluid technique employing carbon dioxide as the carbon source. Nanotubes with diameters ranging from 10 to 20 nm and lengths of several tens of micrometers are synthesized (see figure). The supercritical‐fluid‐grown nanotubes also exhibit field‐emission characteristics similar to MCNTs grown by chemical‐vapor deposition.
Temperature dependence of magnetization reversal in Co and Fe3O4 nanowire arrays
Abstract In this paper, we investigate the magnetization reversal of cobalt and magnetite nanowires, 4 nm in diameter, synthesized within the pores of mesoporous silica thin films. A SQUID magnetometer was used to study the magnetic properties of the nanowire arrays over a broad temperature interval, T= 1.8–300 K. The magnetization reversal process was found to be strongly temperature dependent. While a coherent rotation may occur at room temperature, a process involving the formation of domain structures takes place as the temperature decreases down to 1.8 K.