6533b854fe1ef96bd12ae7c8

RESEARCH PRODUCT

Impedance and admittance characteristics of Bi2S3 nanowire arrays

Arturs ViksnaDonats ErtsJ KatkevicsGunta KunakovaJustin D. Holmes

subject

Horizontal scan rateAdmittanceMaterials sciencebusiness.industryNanoporousDouble-layer capacitanceNanowirechemistry.chemical_elementNanotechnologyBismuthNanoporechemistryOptoelectronicsbusinessElectrical impedance

description

Current studies of the electrical impedance and admittance characteristics of the anodised aluminum oxide (AAO) nanoporous arrays and bismuth sulphide (Bi2S3) nanowire within AAO membranes are presented. The influence of potential and frequency scan rate effect produced on the real, imaginary and complex electrochemical impedance and double layer capacitance of the AAO nanopore and the Bi2S3 nanowire arrays were studied.

https://doi.org/10.1088/1757-899x/49/1/012007