6533b857fe1ef96bd12b3aa3

RESEARCH PRODUCT

Relative Humidity Dependent Resistance Switching of Bi2S3Nanowires

Justin D. HolmesJuris PrikulisDonats ErtsJustin Manjaly VargheseGunta KunakovaRaimonds Meija

subject

Materials scienceArticle SubjectSchottky barrierNanowireSemiconductor nanowiresBi2S3 nanowires02 engineering and technologyFunctional devices010402 general chemistry01 natural sciencesAdsorptionlcsh:Technology (General)MoleculeGeneral Materials ScienceRelative humidityInert gasNanowiresfood and beveragesHumiditySchottky diode021001 nanoscience & nanotechnologyhumanitiesDynamic sensing dependencySchottky barriers0104 chemical sciencesChemical physicslcsh:T1-9950210 nano-technology

description

Electrical properties of Bi2S3nanowires grown using a single source precursor in anodic aluminum oxide templates are sensitive to the relative humidity in an inert gas environment. Dynamic sensing dependency is obtained and shows presence of spontaneous resistance switching effect between low and high relative humidity states. Employing the thermionic field emission theory, heights of Schottky barriers are estimated from the current-voltage characteristics and in relation to the humidity response. The change of Schottky barrier height is explained by local changes in physically adsorbed water molecules on the surface of the nanowire.

yearjournalcountryeditionlanguage
2017-12-25Journal of Nanomaterials
https://doi.org/10.1155/2017/6823601