0000000000210901

AUTHOR

Justin Manjaly Varghese

showing 4 related works from this author

Sensing properties of assembled Bi2S3nanowire arrays

2015

Bismuth sulfide (Bi2S3) nanowires were grown in porous aluminium oxide template and a selective chemical etching was applied to transfer the nanowires to a solution. Well aligned nanowire arrays were assembled on pre-patterned silicon substrates employing dielectrophoresis. Electron beam lithography was used to connect aligned individual nanowires to the common macroelectrode. In order to evaluate the conductometric sensing performance of the Bi2S3 nanowires, current–voltage characteristics were measured at different relative humidity (RH) levels (5–80%) / argon medium. The response of the Bi2S3 nanowires depending of RH is found to be considerably different from those reported for other ty…

Materials scienceArgonSiliconNanowirechemistry.chemical_elementRelative humidityNanotechnologyDielectrophoresisCondensed Matter PhysicsIsotropic etchingAtomic and Molecular Physics and Opticschemistry.chemical_compoundConductometric responsechemistryAluminium oxideBismuth SulphideNanowire arrayPorosityMathematical PhysicsElectron-beam lithographyPhysica Scripta
researchProduct

Photoconductive properties of Bi2S3nanowires

2015

The photoconductive properties of Bi2S3 nanowires synthesized inside anodized alumina (AAO) membrane have been characterized as a function of illuminating photon energy between the wavelengths of 500 to 900 nm and at constant illumination intensity of 1–4 μW·cm−2. Photoconductivity spectra, photocurrent values, photocurrent onset/decay times of individual Bi2S3 nanowires liberated from the AAO membrane were determined and compared with those of arrays of as-produced Bi2S3 nanowires templated inside pores of AAO membrane. The alumina membrane was found to significantly influence the photoconductive properties of the AAO-hosted Bi2S3 nanowires, when compared to liberated from the AAO membrane…

Materials sciencePhotoconductivityPHOTODETECTORSThin filmsPhotoconductivity spectrumAluminaNanowireGeneral Physics and AstronomyNanotechnologySemiconductor growth02 engineering and technology010402 general chemistryNanofabrication01 natural sciencesSemiconductor materialsTHIN-FILMSThin filmONE-DIMENSIONAL NANOSTRUCTURESArraysPhotocurrentOne-dimensional nanostructuresMembranesNanowire surfaceNanowiresbusiness.industryAnodizingPhotoconductivityPhotodetectors021001 nanoscience & nanotechnologyCharge carrier trappingARRAYS0104 chemical sciencesMembraneNanolithographyIllumination intensityAnodized aluminaPhotoconductive propertiesSemiconductor quantum wiresOptoelectronicsAlumina membranesCharge carrierElectron trapsPhoton energy0210 nano-technologybusinessBismuth compoundsJournal of Applied Physics
researchProduct

Application of electrochemical impedance for characterising arrays of Bi2S3 nanowires

2015

Abstract Electrochemical Impedance Spectroscopy (EIS) was used to characterise the electrical properties of bismuth sulphide (Bi2S3) nanowires (NWs) templated within anodic aluminium oxide (AAO) membranes. A specially engineered cell, with a nominal electrolyte volume of 0.1–0.2 ml, was used to hold and measure the electrochemical impedance of the fragile NW/AAO samples. An equivalent circuit model was developed to determine the filling density of nanowires within the porous templates. The EIS method can be utilised to probe the nanowire filling density in porous membranes over large sample areas, which is often unobtainable using electron microscopy and conductive atomic force microscopy t…

Materials scienceGeneral Chemical EngineeringNanowirechemistry.chemical_elementNanotechnologyGrowthElectrical characterizationBismuthchemistry.chemical_compoundElectrochemical Impedance SpectroscopyFabricationElectrodepositionElectrochemistryPorosityElectrical impedanceBismuth sulphideMetalTemplateConductive atomic force microscopyOxide nanowireDielectric spectroscopyNanostructuresNanowireMembranechemistryAluminium oxideAnodic aluminium oxide
researchProduct

Relative Humidity Dependent Resistance Switching of Bi2S3Nanowires

2017

Electrical properties of Bi2S3nanowires grown using a single source precursor in anodic aluminum oxide templates are sensitive to the relative humidity in an inert gas environment. Dynamic sensing dependency is obtained and shows presence of spontaneous resistance switching effect between low and high relative humidity states. Employing the thermionic field emission theory, heights of Schottky barriers are estimated from the current-voltage characteristics and in relation to the humidity response. The change of Schottky barrier height is explained by local changes in physically adsorbed water molecules on the surface of the nanowire.

Materials scienceArticle SubjectSchottky barrierNanowireSemiconductor nanowiresBi2S3 nanowires02 engineering and technologyFunctional devices010402 general chemistry01 natural sciencesAdsorptionlcsh:Technology (General)MoleculeGeneral Materials ScienceRelative humidityInert gasNanowiresfood and beveragesHumiditySchottky diode021001 nanoscience & nanotechnologyhumanitiesDynamic sensing dependencySchottky barriers0104 chemical sciencesChemical physicslcsh:T1-9950210 nano-technologyJournal of Nanomaterials
researchProduct