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RESEARCH PRODUCT

Sensing properties of assembled Bi2S3nanowire arrays

Juris PrikulisJelena KosmacaGunta KunakovaJustin D. HolmesDonats ErtsRaimonds MeijaIvita BiteJustin Manjaly Varghese

subject

Materials scienceArgonSiliconNanowirechemistry.chemical_elementRelative humidityNanotechnologyDielectrophoresisCondensed Matter PhysicsIsotropic etchingAtomic and Molecular Physics and Opticschemistry.chemical_compoundConductometric responsechemistryAluminium oxideBismuth SulphideNanowire arrayPorosityMathematical PhysicsElectron-beam lithography

description

Bismuth sulfide (Bi2S3) nanowires were grown in porous aluminium oxide template and a selective chemical etching was applied to transfer the nanowires to a solution. Well aligned nanowire arrays were assembled on pre-patterned silicon substrates employing dielectrophoresis. Electron beam lithography was used to connect aligned individual nanowires to the common macroelectrode. In order to evaluate the conductometric sensing performance of the Bi2S3 nanowires, current–voltage characteristics were measured at different relative humidity (RH) levels (5–80%) / argon medium. The response of the Bi2S3 nanowires depending of RH is found to be considerably different from those reported for other types of nanowire RH sensor devices.

yearjournalcountryeditionlanguage
2015-08-13Physica Scripta
https://doi.org/10.1088/0031-8949/90/9/094017