0000000000136388
AUTHOR
G. Baubekova
Accumulation of radiation defects and modification of micromechanical properties under MgO crystal irradiation with swift 132Xe ions
This work has been carried out within the framework of the EUROfusion Consortium and has received funding from the Euratom research and training programme 2014-2018 and 2019-2020 under grant agreement No. 633053. The views and opinions expressed herein do not necessarily reflect those of the European Commission. A.A. also acknowledges support via the project GF AP05134257 of Ministry of Education and Science of the Republic of Kazakhstan .
Thermal annealing of radiation damage produced by swift 132Xe ions in MgO single crystals
Abstract The annealing kinetics of the electron-type F+ and F color centers in highly pure MgO single crystals irradiated by 0.23-GeV 132Xe ions with fluences covering three orders of magnitude (Φ = 5 × 1011 –3.3 × 1014 ions/cm2) are studied experimentally via dependence of the optical absorption on preheating temperature. The annealing data are analyzed in terms of the diffusion-controlled bimolecular reactions between F-type centers and complementary interstitial oxygen ions. The behavior of the main kinetic parameters – the migration energies and pre-exponential factors – for different irradiation fluences is discussed and compared with that for other wide-gap binary materials from previ…
About complexity of the 2.16-eV absorption band in MgO crystals irradiated with swift Xe ions
Abstract The precise study of the accumulation and subsequent thermal annealing of the defects responsible for the complex absorption band around 2.16 eV, being under discussion in the literature for a long time, has been performed in highly pure MgO single crystals exposed to 0.23-GeV 132Xe ions with a fluence of Φ = 5 × 1011 − 3.3 × 1014 ions/cm2. Three Gaussian components with the maxima at 2.16, 2.02 and 2.40 eV have been considered as a measure of so-called D1, D2 and D3 defects. Similar to the F and F+ centers, the concentration of these defects increases at high fluences without saturation marks, thus confirming their radiation-induced nature (involvement of novel Frenkel defects). T…
Transition levels of acceptor impurities in ZnO crystals by DFT-LCAO calculations
This research was partly supported by the Kazakhstan Science Project № AP05134367«Synthesis of nanocrystals in track templates of SiO2/Si for sensory, nano-and optoelectronic applications» and Latvian Super Cluster (LASC), installed in the Institute of Solid State Physics (ISSP) of the University of Latvia. Authors are indebted to D. Gryaznov, A. Popov and A. Dauletbekova for stimulating discussions.