0000000000172204
AUTHOR
Bernd Schmidt
showing 5 related works from this author
N,N′-Disubstituted Indigos as Readily Available Red-Light Photoswitches with Tunable Thermal Half-Lives
2017
Some rare indigo derivatives have been known for a long time to be photochromic upon irradiation with red light, which should be advantageous for many applications. However, the absence of strategies to tune their thermal half-lives by modular molecular design as well as the lack of proper synthetic methods to prepare a variety of such molecules from the parent indigo dye have so far precluded their use. In this work, several synthetic protocols for N-functionalization have been developed, and a variety of N-alkyl and N-aryl indigo derivatives have been prepared. By installation of electron-withdrawing substituents on the N-aryl moieties, the thermal stability of the Z-isomers could be enha…
Radiation induced defects in SiO 2
2002
The main luminescent centers in SiO 2 films are the red luminescence R (650 v nm; 1.85 v eV) of the non-bridging oxygen hole center (NBOHC) and the twofold-coordinated (divalent) silicon with a blue B (460 v nm; 2.7 v eV) and a UV band (285 v nm; 4.4 v eV). Especially the latter ones are produced under irradiation, but from existing precursors assumed as silicon related oxygen deficient centers (SiODC). Therefore, in order to prove these models we compare a direct oxygen implantation with a direct silicon implantation into SiO 2 layers. The main result is: implanting oxygen increases the red band R but does not affect the blue band B. Silicon surplus increases the amplitude of the blue (B) …
Cathodoluminescence of crystalline and amorphous SiO2 and GeO2
2001
Abstract Cathodoluminescence (CL) and its temperature-dose behaviour are presented for different crystalline and amorphous modifications of SiO 2 and GeO 2 as well as for Ge-doped SiO 2 layers. The crystalline samples include four-fold coordinated Si and Ge in hexagonal quartz and quartz-like crystals, respectively, as well six-fold coordinated atoms in tetragonal rutile-like crystals. The detected luminescence bands, in general, are attributed to three optical active luminescence centres: the two-fold coordinated silicon (=Si:) and germanium (=Ge:) centre, respectively, the non-bridging oxygen hole centre (NBOHC) and the self trapped exciton (STE). The first ones, the oxygen deficient cent…
Cathodoluminescence decay kinetics in Ge+, Si+, O+ implanted SiO2 layers
2003
Abstract Cathodoluminescence spectral shapes and respective band decay times show no similarity between luminescence centers in different crystal and amorphous modifications of SiO2 and GeO2. On the other hand, the additionally produced red luminescence centers (650 nm) by oxygen implantation into SiO2 layers are of the same nature as in stoichiometric SiO2 and are attributed to the non-bridging oxygen hole center (NBOHC). On the other hand, the elevated blue luminescence (460 nm) in Si implanted SiO2 belongs to the silicon related oxygen deficient center (SiODC) as in stoichiometric layers also. Ge implantation into SiO2 and thermal post-annealing leads to a huge violet luminescence (400 n…
Cathodoluminescence of Ge+, Si+, and O+ implanted SiO2 layers and the role of mobile oxygen in defect transformations
2002
Abstract Thermally grown SiO 2 layers of thickness d =500 nm have been implanted by Ge + , Si + , and O + ions of energy 350, 150, and 100 keV, respectively, and a uniform implantation dose of D i =5×10 16 ions/cm 2 . Thus the implantation profiles are expected with a concentration maximum of nearly 4 at.% at the half-depth d m ≅250 nm of the SiO 2 layers. After thermal annealing to 900 °C for 1 h in dry nitrogen or vacuum the typical violet luminescence band ( λ =400 nm) of the Ge + implanted centers is increased more than 200-fold and the Ge luminescent center depth profile is shifted from about 250 to 170 nm towards the surface as determined by cathodoluminescence (CL) depth profiling. I…