Numerische Simulation der Phasengrenzen und Schmelzenströmung bei der Züchtung von Siliziumeinkristallen mit dem Floating-Zone Verfahren

3D modeling of growth ridge and edge facet formation in 〈100〉 floating zone silicon crystal growth process

Abstract A 3D quasi-stationary model for crystal ridge formation in FZ crystal growth systems for silicon is presented. Heat transfer equations for the melt and crystal are solved, and an anisotropic crystal growth model together with a free surface shape solver is used to model the facet growth and ridge formation. The simulation results for 4″ and 5″ crystals are presented and compared to experimental ridge shape data.