0000000000182828

AUTHOR

Jānis Virbulis

showing 2 related works from this author

Numerische Simulation der Phasengrenzen und Schmelzenströmung bei der Züchtung von Siliziumeinkristallen mit dem Floating-Zone Verfahren

1997

Silicon crystalsElektromagnetisches FeldSiliziumeinkristallen:NATURAL SCIENCES::Physics [Research Subject Categories]WārmeSilīcija kristāliPhasengrenzenKristallenSchmelzenstromungFāžu pārejas
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3D modeling of growth ridge and edge facet formation in 〈100〉 floating zone silicon crystal growth process

2019

Abstract A 3D quasi-stationary model for crystal ridge formation in FZ crystal growth systems for silicon is presented. Heat transfer equations for the melt and crystal are solved, and an anisotropic crystal growth model together with a free surface shape solver is used to model the facet growth and ridge formation. The simulation results for 4″ and 5″ crystals are presented and compared to experimental ridge shape data.

010302 applied physicsMaterials scienceSiliconPhysics::Opticschemistry.chemical_elementCrystal growthGeometry02 engineering and technologyEdge (geometry)021001 nanoscience & nanotechnologyCondensed Matter PhysicsRidge (differential geometry)01 natural sciencesInorganic ChemistryMonocrystalline siliconCrystalchemistryCondensed Matter::SuperconductivityFree surface0103 physical sciencesMaterials ChemistryFacet0210 nano-technologyJournal of Crystal Growth
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