6533b86efe1ef96bd12cb315
RESEARCH PRODUCT
3D modeling of growth ridge and edge facet formation in 〈100〉 floating zone silicon crystal growth process
Jānis VirbulisG. RatnieksA. KrauzeS. Zitzelsbergersubject
010302 applied physicsMaterials scienceSiliconPhysics::Opticschemistry.chemical_elementCrystal growthGeometry02 engineering and technologyEdge (geometry)021001 nanoscience & nanotechnologyCondensed Matter PhysicsRidge (differential geometry)01 natural sciencesInorganic ChemistryMonocrystalline siliconCrystalchemistryCondensed Matter::SuperconductivityFree surface0103 physical sciencesMaterials ChemistryFacet0210 nano-technologydescription
Abstract A 3D quasi-stationary model for crystal ridge formation in FZ crystal growth systems for silicon is presented. Heat transfer equations for the melt and crystal are solved, and an anisotropic crystal growth model together with a free surface shape solver is used to model the facet growth and ridge formation. The simulation results for 4″ and 5″ crystals are presented and compared to experimental ridge shape data.
year | journal | country | edition | language |
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2019-08-01 | Journal of Crystal Growth |