0000000000189703
AUTHOR
M.a. Hernández-fenollosa
Electrochemical Deposition Mechanism for ZnO Nanorods: Diffusion Coefficient and Growth Models
Fabrication of nanostructured ZnO thin films is a critical process for many applications based on semiconductor devices. So on understanding of the electrochemical deposition mechanism is also fundamental for knowing the optimal conditions on growth of ZnO nanorods by electrodeposition. In this paper the electrochemical mechanism for ZnO nanorods formation is studied. Results are based on the evolution of the diffusion coefficient using the Cotrell equation, and different growth models proposed by Scharifcker and Hills for nucleation and growth.
ZnO Nanoestructured Layers Processing with Morphology Control by Pulsed Electrodeposition
The fabrication of nanostructured ZnO thin films is a critic process for a lot of applications of this semiconductor material. The final properties of this film depend fundamentally of the morphology of the sintered layer. In this paper a process is presented for the fabrication of ZnO nanostructured layers with morphology control by pulsed electrodeposition over ITO. Process optimization is achieved by pulsed electrodeposition and results are assessed after a careful characterization of both morphology and electrical properties. SEM is used for nucleation analysis on pulsed deposited samples. Optical properties like transmission spectra and Indirect Optical Band Gap are used to evaluate th…
Nucleant layer effect on nanocolumnar ZnO films grown by electrodeposition
Different ZnO nanostructured films were electrochemically grown, using an aqueous solution based on ZnCl2, on three types of transparent conductive oxides grow on commercial ITO (In2O3:Sn)-covered glass substrates: (1) ZnO prepared by spin coating, (2) ZnO prepared by direct current magnetron sputtering, and (3) commercial ITO-covered glass substrates. Although thin, these primary oxide layers play an important role on the properties of the nanostructured films grown on top of them. Additionally, these primary oxide layers prevent direct hole combination when used in optoelectronic devices. Structural and optical characterizations were carried out by scanning electron microscopy, atomic for…
Correlation between optical and transport properties of Ga-doped ZnO thin films prepared by pulsed laser deposition
Abstract In this paper we report on the correlation between the transport and optical properties of Ga-doped ZnO films epitaxially grown on C-oriented sapphire substrates by means of pulsed laser deposition. Thin films with electron concentrations ranging between 10 20 and 10 21 cm −3 were prepared from targets containing 0.25–5 at.% Ga. The Ga content in the thin films was estimated by XPS, from the ratio between the intensities of the 2p peaks of Ga and Zn. The electron concentration in the films is very close to the Ga content for films prepared from low Ga content targets even at high deposition temperature. For Ga contents in the target larger than 1%, the Ga content in the films incr…