0000000000205030
AUTHOR
A.k. Malik
Диссипативное туннелирование электронов в вертикально связанных двойных асимметричных квантовых точках InAs/GaAs(001)
We report on the results of experimental studies of the photoelectric properties of a GaAs p-i-n photodiode with InAs/GaAs(001) double asymmetric quantum dots (DAQDs) grown by self-assembling in Metal Organic Vapor Phase Epitaxy (MOVPE) process. Three peaks were observed in the dependence of the photocurrent on the reverse bias measured at monochromatic photoexcitation of the DAQDs at the wavelength corresponding to the energy of interband optical transitions between the ground hole and electron states in the bigger QDs. These peaks were related to the tunneling of the photoexcited electrons between the QDs including the dissipative one (with emission and absorption of the optical phonons)…
Особенности двумерных бифуркаций при диссипативном туннелировании электронов в массивах Au наночастиц
Abstract. In framework of the 2D - dissipative tunneling theory in approximation of a rarefied gas of the «instanton - antiinstanton pairs» at a finite temperature under the conditions of an external electric field, the features of tunneling transport for planar structures with quantum dots (QDs) from colloidal gold, that have metamaterial properties, have been studied. It was experimentally shown that, depending on the positioning of the cantilever needle of a combined atomic force and scanning tunneling microscope (AFM / STM), either above a single quantum dot or between two neighboring quantum dots, either a single or double effect of 2D tunneling bifurcations have been observed, respec…
Influence effect of an external electric field and dissipative tunneling on intracenter optical transitions in quantum molecules with D2- states
In the zero-range potential model and in the effective mass approximation, dispersion equations have been obtained, that describe dependence of the average binding energies of the quasistationary g- and u-states of the D − 2 - center in the QD, as well as the widths of energy levels on the magnitude of the external electric field and the parameters of 1D-dissipative tunneling. Dips in the field dependences of the binding energies average values for quasi-stationary g- and u-states have been revealed. It is shown that the field dependences of the energy level widths for the g- and u- states of the D − 2 -center have a resonance structure at the external electric field strengths corresponding…