6533b7d3fe1ef96bd1260898
RESEARCH PRODUCT
Диссипативное туннелирование электронов в вертикально связанных двойных асимметричных квантовых точках InAs/GaAs(001)
Y.h. WangA.в. ШороховA.в. ШороховИ.M. СеменовД.O. ФилатовT.r. LiA.п. ШкуриновM.б. СеменовA.k. Maliksubject
Condensed Matter::Materials ScienceCondensed Matter::OtherPhysics::OpticsCondensed Matter::Mesoscopic Systems and Quantum Hall Effectdescription
We report on the results of experimental studies of the photoelectric properties of a GaAs p-i-n photodiode with InAs/GaAs(001) double asymmetric quantum dots (DAQDs) grown by self-assembling in Metal Organic Vapor Phase Epitaxy (MOVPE) process. Three peaks were observed in the dependence of the photocurrent on the reverse bias measured at monochromatic photoexcitation of the DAQDs at the wavelength corresponding to the energy of interband optical transitions between the ground hole and electron states in the bigger QDs. These peaks were related to the tunneling of the photoexcited electrons between the QDs including the dissipative one (with emission and absorption of the optical phonons). The experimental results agree qualitatively with the theoretical field dependence of the 1D dissipative tunneling probability between the QDs.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2021-01-01 | Журнал технической физики |