0000000000217529
AUTHOR
Saulius Nargelas
Excitation Transfer Engineering in Ce-Doped Oxide Crystalline Scintillators by Codoping with Alkali-Earth Ions
This work has been supported by the European Social Fund Measure No. 09.3.3-LMT-K-712 activity Improvement of Researchers Qualification by Implementing the World-Class R&D Projects, and by grant #14.W03.31.0004 of the Russian Federation Government. Authors are grateful to CERN Crystal Clear Collaboration and COST Action TD1401 "Fast Advanced Scintillator Timing (FAST)" for support of collaboration.
Carrier dynamics in epilayers and nanocolumns of ternary AlGaN with a tunable bandgap
We apply several optical time-resolved techniques to investigate the dynamics of excess carriers in AlxGa1−xN nanocolumns grown on (111) silicon substrates and in thick AlxGa1−xN epitaxial layers deposited on sapphire. We demonstrate that carrier lifetime drops in nanocolumns by several times if compared to epilayers with similar Al content; in addition, recombination rate displays a strong nonlinearity on excitation. On the other hand, carrier localization effects observed in the epilayers completely disappear in nanocolumns.