6533b859fe1ef96bd12b7fce
RESEARCH PRODUCT
Carrier dynamics in epilayers and nanocolumns of ternary AlGaN with a tunable bandgap
Kuei-hsien ChenKęstutis JarašiūnasSaulius MiasojedovasB. BerzinaYen-ting ChenLi-chyong ChenSaulius NargelasPatrik ŠčAjevRamūnas AleksiejūnasJ GrigorjevaLaima TrinklerM W Chensubject
Materials scienceSiliconbusiness.industryBand gapchemistry.chemical_elementCarrier lifetimeEpitaxychemistrySapphireOptoelectronicsTernary operationCarrier dynamicsbusinessExcitationdescription
We apply several optical time-resolved techniques to investigate the dynamics of excess carriers in AlxGa1−xN nanocolumns grown on (111) silicon substrates and in thick AlxGa1−xN epitaxial layers deposited on sapphire. We demonstrate that carrier lifetime drops in nanocolumns by several times if compared to epilayers with similar Al content; in addition, recombination rate displays a strong nonlinearity on excitation. On the other hand, carrier localization effects observed in the epilayers completely disappear in nanocolumns.
year | journal | country | edition | language |
---|---|---|---|---|
2012-08-20 | IOP Conference Series: Materials Science and Engineering |