Use of aluminum nitride for UV radiation dosimetry

Abstract An investigation of AlN ceramics for applications in UV radiation detection shows the advantages of using the 480 nm emission band for optically stimulated luminescence signal detection instead of the previously used 400 nm emission band since the rate of decrease of the response signal at room temperature is lower than that of the 400 nm band, and its excitation region falls in the UV-B range.

Quasimolecular luminescence centers formed by photoinduced recombination of exciton-created defects in KI

Abstract The photoinduced recombination of exciton-created lattice defects - the F,H center pairs was studied in KI crystal at low temperatures. Two different luminescence centers with quasimolecular structure can be distinguished. One of them is the self-trapped exciton, the other one could be the H-plus-electron (H+e) center.

Oxygen-related defects and energy accumulation in aluminum nitride ceramics

Abstract Features of oxygen-related defects in the AlN crystalline lattice were studied. Spectral characteristics of photoluminescence and photostimulated luminescence under the UV light irradiation of AlN ceramics were examined. The results obtained allow us to propose the mechanisms of luminescence and radiation-induced energy accumulation in AlN.

Nitrogen vacancy type defect luminescence of AlN nanopowder

Abstract Native luminescent defects were investigated in AlN nanopowder (NP) using spectral characterization methods. Photoluminescence and its excitation spectra were studied within a wide temperature range from 8K up to room temperature. It was found that in AlN NP a broad luminescence band appears within a blue spectral region consisting of at least two sub-bands at 415 nm and 390 nm, which can be related to presence of two different but in the same time similar defect types. These luminescent defects are located either inside the bulk material or on the material surface. Interaction of the surface defects with environmental oxygen was found resulting in quenching of the blue luminescenc…

Defect formation in photochromic Ca2SnO4: Al3+

Abstract Photoluminescence, photochromism and defect formation were analysed in Ca2SnO4 doped with 0–20% Al3+. Bright cyan luminescence attributed to Sn2+ was detected in all samples. Introduction of Al3+ in Ca2SnO4 led to an enhancement of Sn2+ emission by up to 70% in comparison with an undoped sample. After exposure to UV irradiation, two absorbance bands centered at 520 nm and 710 nm and three paramagnetic defects were observed in Al3+-doped Ca2SnO4 samples. The paramagnetic centers were identified as a hole type and two different Sn3+ centers. Electron paramagnetic resonance (EPR) data suggested that one of the Sn3+ centers is located in a close proximity of Al3+. Analysis of the stabi…

UV-light induced luminescence processes in Al2O3 bulk and nanosize powders

Abstract UV-light induced photoluminescence (PL) and thermoluminescence (TL) have been studied in the alumina (Al2O3) bulk and nanosize powders. It has been found that luminescence properties of the studied alumina powders are determined mainly by presence of the uncontrolled impurities of titanium, iron and chromium. Despite the general similarity of PL characterized by two main emission band around 400 and 750 nm a number of differences has been observed in relative yield and position of the emission bands as well as in the excitation spectrum of the short wavelength band. Essential differences have been observed also in the intensity of the TL signal, TL curves and TL emission spectra re…

Exciton-created defects and their participation in energy transfer from excitons to Tl ions in KI–Tl crystal

Abstract Luminescence properties (spectra, yields, kinetics) of Tl ions induced by energy transfer from different types of anion excitons were studied and compared with those observed under direct Tl ion excitation by light quanta from A and C absorption bands in KI–Tl crystal at low temperature. The mechanism of energy transfer from excitons to the impurity ions was proposed based on the exciton-created defects participating in the impurity ion excitation.

Photoluminescence of Al2O3 nanopowders of different phases

Abstract Photoluminescence was studied in six samples of Al2O3 nanopowders produced from the same initial material by calcination in the 800–1400 °C temperature range. At temperature around 1200 °C phase transition in aluminum oxide lattice occurs; the samples produced at temperatures up to 1200 °C contain mainly δ phase, while those obtained at 1400 °C contain pure α phase. In all studied samples of nominally pure aluminum oxide nanopowders photoluminescence is determined by trace level concentrations of uncontrolled impurities. It was found that phase transition is accompanied with modification of the emission spectrum: a broad band centered around 750 nm presumably ascribed to emission o…

Radiation induced luminescence processes in c-BN

Abstract Spectral properties of cubic boron nitride have been studied using methods of photoluminescence (PL), X-ray excited luminescence (XL), thermoluminescence (TL) and optically stimulated luminescence. It is found that emission of cubic boron nitride is presented by 4 subbands, their relative yield is determined by the excitation type: blue, green (dominant) and red bands are observed in PL, ultraviolet, blue (dominant), green and red bands—in XL. Three thermal peaks are found in TL curves in the 0–700°C temperature range, their presence and intensity depend on radiation type used. A tentative correspondence between thermal peaks and emission bands is found.

Luminescence properties of AlN nanostructures revealed under UV light irradiation

The luminescence properties of the AlN nanostructures – nanorods and nanotips -revealed under the UV irradiation are similar to those of the AlN ceramics. Presumably they are induced by the recombination processes in the oxygen-related centers. All the studied luminescence processes (photoluminescence, thermoluminescence and optically stimulated luminescence) in the nanostructures occur mainly through the host lattice excitation. That may be explained by the smaller concentration of the defect centers and more perfect structure of the host lattice of the nanostructures compared to the ceramics. The small mutual differences revealed in the spectra and TL curves of the AlN nanotips and nanoro…

Photoluminescence in AlN: macro‐size and nano‐powder

Photoluminescence (PL) properties in AlN are studied when size of polycrystalline grains is reduced from macro-size (AlN ceramics and macro-size powder) to nano-size (nano-powder). It was found that in all these materials within the UV- blue spectral region two PL bands are observed at ∼400 nm (caused by the oxygen-related defects) and at 480 nm (with unknown defect structure) but the ratio of their intensities depends on the grain size. Reduction of AlN grain size results in decrease of the 400 nm band and increase of the 480 nm band. It allows the following conclusions: i) reduction of AlN grain size results in decrease of oxygen (the native impurity of AlN) content in the crystalline lat…

Peculiarities of photoluminescence of Al2O3 bulk and nanosize powders at low temperatures

Abstract Photoluminescence has been studied in the aluminum oxide (Al2O3) bulk and nanosize powders in the 300–8 K temperature range. In both samples luminescence spectrum is characterized by presence of broad blue and red bands caused mainly by emission from the uncontrolled titanium impurity. At low temperatures luminescence intensity increases by several times and the red band obtains fine structure. The nature of the fine structure is discussed suggesting manifestation of splitting of the Ti3+ emitting level due to Jahn–Teller effect or overlapping of Ti3+ emission band with narrow lines from other emitting ions. The observed differences in low-temperature spectral features of nanopowde…

UV light induced luminescence processes in AlN nanotips and ceramics

UV induced luminescence properties of AlN (Eg = 6.2 eV) have been studied for AlN nanotips and AlN ceramics, using methods of photoluminescence, optically stimulated luminescence and thermoluminescence. In both types of objects the main luminescence band, which appears in prompt and stimulated emission spectra around 400 nm, arises due to presence of oxygen-related defects. The main difference between AlN nanotips and AlN ceramics is observed in excitation spectra and TL properties. Basing on the experimental results it is assumed that several different energy transfer mechanisms occur in AlN. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Influence of boron on donor–acceptor pair recombination in type IIa HPHT diamonds

Abstract We report on the investigation of donor–acceptor pair (DAP) and free carrier recombination in HPHT IIa type diamonds and determination of boron concentration by differential transmittivity (DT) technique. Photoluminescence and photoluminescence excitation spectra were measured in 8–300 K temperature range and provided a broad (~ 0.67 eV) Gaussian DAP band which peaked at 2.2 eV at low temperatures, while above 200 K it sharply shifted to 2.5 eV and became more intense. Thermoluminescence measurements also demonstrated a similar tendency. This peculiarity was explained by DAP recombination between the nitrogen and the boron, the latter being in the ground and the excited states at l…

Self-trapped exciton formation through photo-induced recombination of F and H centers in alkali iodides

The photo-induced conversion of the primary F, H center pairs into self-trapped excitons have been proposed and studied in alkali iodides.

Stimulated luminescence of AlN ceramics induced by ultraviolet radiation

Abstract Properties of thermally stimulated luminescence (TL) and optically stimulated luminescence (OSL) of the ceramic material AlN-Y 2 O 3 have been studied after exposure to ultraviolet radiation (UVR). The dosemeter material Al 2 O 3 : C has been used for comparative measurements. The spectral sensitivity of the samples has been studied and compared with spectral effectiveness of the UVR-induced biological processes. It has been shown that a very high yield and linear dose response characterise the UVR-induced TL from AlN-Y 2 O 3 . Although lower than the TL, the OSL signal from UV-exposed AlN-Y 2 O 3 is still higher than that of Al 2 O 3  : C in a broad spectral region. The possibilit…

Formation of self-trapped excitons through stimulated recombination of radiation-induced primary defects in alkali halides

Abstract A self-trapped exciton formation through photostimulated recombination of an F and an H center — the exciton-created primary defect pair, is proposed and experimentally examined in alkali halides at low temperatures.

Thermoluminescence properties of AlN ceramics

Abstract The paper describes thermoluminescence (TL) properties of AlN:Y 2 O 3 ceramics irradiated with ionising radiation. A high TL sensitivity of AlN:Y 2 O 3 ceramics to radiation encouraged a study of the AlN ceramics for application as a dosimetric material. The paper presents experimental data on: glow curve, emission spectrum, dose response, energy dependence, influence of heating rate and fading rate. The measured TL characteristics were compared with those of well-known, widely used TLDs, i.e. LiF:Mg,Ti, LiF:Mg,Cu,P and Al 2 O 3 :C. It is concluded that AlN:Y 2 O 3 ceramics showing a radiation sensitivity which is approximately 50 times greater than that of LiF:Mg,Ti is an interest…

Luminescence mechanisms of oxygen-related defects in AlN

Spectral characteristics of native oxygen-related defects existing in the crystalline lattice of AlN were studied. Features of photoluminescence observed under exposure to ultraviolet light together with those of the photostimulated luminescence testify the recombination character of luminescence. The mechanism of luminescence of oxygen-related defects is proposed.

Defect-induced blue luminescence of hexagonal boron nitride

Abstract Native defect-induced photoluminescence around 400 nm (blue luminescence - BL) was studied in hBN materials with different size and various origins. The following spectral characterizations were used: spectra of luminescence and its excitation, luminescence dependence on temperature, luminescence kinetics, optically stimulated luminescence and infrared absorption. It was found, that the BL is characteristic for all these materials, which were studied. The BL forms a wide, asymmetric and phonon-assisted emission band at 380 nm. This luminescence can be excited either through the exciton processes, or with light from two defect-induced excitation bands at 340 nm and 265 nm. It was fo…

Photoluminescence excitation spectroscopy in boron nitride nanotubes compared to microcrystalline h‐BN and c‐BN

Photoluminescence spectra and photoluminescence excitation spectra have been measured on samples of hexagonal boron nitride microcrystalline powder, cubic boron nitride single crystal, and boron nitride nanotubes (mixture of single-walled and multi-walled with some h-BN precursor). The reason for studying these 3 samples in a comparative fashion is that nanotube BN, while based on a rolled hexagonal-BN (sp2-bonded) sheet, is expected to take on more sp3 bond-character reminiscent of cubic-BN as the curvature becomes tighter. With some simplicity of statement, this study was planned to view spectroscopy of nanotube BN with respect to its two limiting cases of bond character, all measured in …

Exciton luminescence of boron nitride nanotubes and nano-arches

We report photoluminescence (PL) and PL-excitation spectroscopy of BN nanotubes (nt-BN) mixed with some residual hexagonal crystalline (h-BN) starting material, and of pure h-BN microcrystalline powder. The nanotube phase exhibits a broad-band PL near 380 nm, in agreement with a published report of cathodoluminescence from a sample comprising >90% nanotubes. This emission is almost 3 eV lower in energy than unrelaxed exciton states found in recent all-electron theories of nt-BN and h-BN and about 1.4 eV lower than the lowest (perturbed dark?) exciton seen in absorption of nt-BN. This may suggest that excitons in nt-BN vibrationally relax to self-trapped states before emitting, a path found …

AlN Ceramics from Nanosized Plasma Processed Powder, its Properties and Application

Spectral properties of AIN ceramics

Spectral properties of oxygen-related defects are studied in AIN ceramics at room temperatures. Original results concerning the photoluminescence under ultraviolet irradiation are obtained; they include the excitation spectrum and irradiation dose effects. The ultraviolet light energy storage and its release under irradiation with visible or infrared light in the form of the photostimulated luminescence has been observed in AIN ceramics. The properties of the photostimulated luminescence such as creation, emission and stimulation spectra are reported. For the explanation of the experimental results the mechanism of the recombination luminescence involving the oxygen-related defect is propos…

Anisotropic photoluminescence of nonpolar ZnO epilayers and ZnO/Zn1 −xMgxO multiple quantum wells grown on LiGaO2 substrate

Ministry of Science and Technology, Taiwan (104-2221-E-110-012-MY3, 107-2221-E-110-004-MY3); National Natural Science Foundation of China (51602309, U1605245).

Spectral characterization of bulk and nanostructured aluminum nitride

Spectral characteristics including photoluminescence (PL) spectra and its excitation spectra for different AlN materials (AlN ceramics, macro size powder and nanostructured forms such as nanopowder, nanorods and nanotips) were investigated at room temperature. Besides the well known UV-blue (around 400 nm) and red (600 nm) luminescence, the 480 nm band was also observed as an asymmetric long-wavelength shoulder of the UV-blue PL band. This band can be related to the luminescence of some kind of surface defects, probably also including the oxygen-related defects. The mechanisms of recombination luminescence and excitation of the UV-blue luminescence caused by the oxygen-related defects were …

Spectral Characteristics of Native Defects in BN

Spectral characteristics of native defects from the crystalline lattice of c-BN were studied. It is found that the photoluminescence (PL) spectrum under exposure to ultraviolet-blue light has a complex structure containing a predominant wide 2.5 eV luminescence band at room temperature. The photostimulated luminescence (PSL) consists of a band, which is coincident with the 2.5 eV PL. The results obtained allow to conclude that the same defects are responsible for both the PL and PSL formation.

Ab initio simulations on the atomic and electronic structure of single-walled BN nanotubes and nanoarches

To simulate the perfect single-walled boron nitride nanotubes and nanoarches with armchair- and zigzag-type chiralities and uniform diameter of � 5 nm, we have constructed their one-dimensional (1D) periodic models. In this study, we have compared the calculated properties of nanotubes with those for both hexagonal and cubic phases of bulk: bond lengths, binding energies per B–N bond, effective atomic charges as well as parameters of total and projected one-electron densities of states. For both phases of BN bulk, we have additionally verified their lattice constants. In the density functional theory (DFT), calculations performed using formalism of the localized Gaussian-type atomic functio…

Luminescence properties of LiGaO2 crystal

The study was supported by the Latvia-Lithuania-Taiwan research project “Nonpolar ZnO thin films: growth-related structural and optical properties” (Latvia: LV-LT-TW/2016/5 , Lithuania: TAP LLT 02/2014 , Taiwan: MOST 103-2923-M-110-001-MY3 ).

Optical properties of lithium gallium oxide

Abstract The optical dielectric function tensor of orthorhombic single-crystal LiGaO 2 was determined for polarizations along a , b , and c crystal-axis in the photon energy range from 0.04 eV to 6.5 eV by the generalized spectroscopic ellipsometry. In the far-infrared spectral range from 12.4 meV to 40 meV, the dielectric function was determined from conventional polarized transmittance and polarized reflectance measurements. Lineshape analysis of the dielectric function tensor major components allowed for a determination of the long-wavelength optical phonon characteristics, refractive indices dispersion, and parameters of interband and excitonic optical transitions.

Potential application of some wide band gap materials for UV dosimetry

Properties of some wide band gap materials–natural and CVD diamonds – have been studied for their potential application in UV dosimetry, using methods of optically stimulated luminescence and thermoluminescence. The observed properties are compared with those of the previously studied AlN ceramics. From the OSL excitation spectra, it follows that spectral sensitivity of the studied materials falls mainly into the UVC range, OSL and TL emission spectra are located within the visible light region, thus suitable for usual photodetectors. OSL stimulation spectra of the studied materials have a continuous character and are located in a broad visible/near infrared spectral region implying that th…

Carrier dynamics in epilayers and nanocolumns of ternary AlGaN with a tunable bandgap

We apply several optical time-resolved techniques to investigate the dynamics of excess carriers in AlxGa1−xN nanocolumns grown on (111) silicon substrates and in thick AlxGa1−xN epitaxial layers deposited on sapphire. We demonstrate that carrier lifetime drops in nanocolumns by several times if compared to epilayers with similar Al content; in addition, recombination rate displays a strong nonlinearity on excitation. On the other hand, carrier localization effects observed in the epilayers completely disappear in nanocolumns.

Luminescence properties of wurtzite AlN nanotips

The optical properties of aluminum nitride nanotips (AlNNTs) synthesized via vapor transport and condensation process have been studied by cathodoluminescence, photoluminescence (PL), thermoluminescence (TL), and UV absorption measurements. Two defect related transitions around 2.1 and 3.4eV and an excitonic feature at 6.2eV were identified. Compared to the AlN macropowders, the AlNNTs showed a blueshift (+0.2eV) of the ∼3.2eV peak. Analysis of both PL and TL excitation measurements indicated the existence of subband gap multiple energy levels in AlNNTs. A significant TL intensity even at 145°C suggests possible ultraviolet detector and dosimetric applications of these AlNNTs.

Influence of vinyltriethoxysilane concentration on structural and luminescent characteristics of cerium doped yttrium based silicate phosphors

Abstract Cerium doped yttrium silicates phosphors (YSO:Ce) were prepared by gel combustion using vinyltriethoxysilane (VTEOS) as silicon sources along with aspartic acid as fuel and yttrium-cerium nitrate as oxidizer. The study presents the influence of VTEOS amount in the synthesis mixture on the structural and luminescent characteristics of silicate phosphors. The understanding of precursor׳s decomposition was achieved on the basis of thermal analysis in association with gas evolved analysis. XRD, FTIR and XPS were used to reveal the structural changes that occur with VTEOS molar amount variation from 1 to 3 mol. It was found that the main crystalline phase was X2-Y 2 SiO 5 . The luminesc…

UV light energy storage and thermoluminescence in AlN ceramics

AlN ceramics, untreated and subjected to oxygen ion implantation, are studied for potential application in TL dosimetry of UV light. Based on photoluminescence and thermoluminescence measurements there are shown advantages of the selection of the 480 emission band for TL signal recording instead of the previously used 400 nm band: higher intensity of the TL signal, lower fading rate of the accumulated TL signal, excitation region (270-340 nm) corresponding to UV-B range, monitoring of which is actual in UV dosimetry. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Aluminium nitrate ceramics: a potential UV dosemeter material.

The ceramic material AlN-Y 2 O 3 is proposed as a potential ultraviolet radiation (UVR) dosemeter using optically stimulated luminescence (OSL) and thermally stimulated luminescence (TL). Experimental studies have shown that AlN ceramics exhibit attractive characteristics suitable for practical UV dosimetry applications. The features are: (1) the spectral sensitivity covers the 200-350 nm range, in the UV-B region it is similar to that of human skin; (2) the angular dependence of the incident radiation follows the cosine law; (3) high yields of both UVR-induced OSL and TL signals compared to those of Al 2 O 3 :C; and (4) a large dynamic range TL signal (5 orders of magnitude). Although ther…

<title>Use of AlN ceramics in ultraviolet radiation dosimetry</title>

AlN-Y2O3 ceramics is studied as a material for application in the area of ultraviolet radiation (UVR) dosimetry. The properties of optically stimulated luminescence (OSL) and thermally stimulated luminescence (TL) revealed by AlN ceramics are characterized and considered for practical application. A special attention is devoted to studies of the spectral properties of the material, including stimulated luminescence. Spectral properties of the material make it potentially suitable for dosimetric application both in UV-C region (200-290 nm), where it has the maximum sensitivity, and in UV-B+UV-A (290-350 nm) region, where the spectral behavior of its sensitivity coincides rather well with tha…

Investigation of Oxygen-Related Luminescence Centres in AlN Ceramics

The structure of oxygen-related luminescence centres in nominally undoped and Y 2 O 3 doped AlN ceramics was investigated by electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR) and optically-detected EPR. The photoluminescence-detected EPR lines having g-values of 1.990 and 2.008 were assigned to a recombination between neighbouring donor and acceptor pairs. The two EPR lines at g = 1.987 and 2.003 detected via the recombination luminescence in the afterglow are thought to be due to a recombination between the same, but distant donor and acceptor pairs. The donor was previously speculated to be an electron trapped on an oxygen impurity which substitutes for a ni…

Magnetic resonance investigations of oxygen-related luminescence centres in AlN ceramics

Abstract The structure of oxygen-related luminescence centres in nominally undoped and Y2O3-doped AIN ceramics were investigated by electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR) and optically-detected EPR. The photoluminescence-detected EPR lines having g values of 1.990 and 2.008 were attributed to neighbouring donor and acceptor pairs causing the recombination luminescence excited in the ultraviolet. The two EPR lines at g = 1.987 and g = 2.003, detected via the recombination luminescence in the afterglow, are thought to be due to a recombination between the same, but more distant donor and acceptor pairs. The donor is supposed to be an electron trapped …

Localised transitions in luminescence of AlN ceramics

Abstract The photoluminescence (PL) and thermoluminescence (TL) properties of AlN ceramics revealed under UV irradiation are determined mainly by oxygen-related centres, giving rise to the UV (around 3.18 eV) and the Blue (2.58 eV) bands. It was found that the UV irradiation-generated donor–acceptor pairs (DAPs), responsible for the UV emission band, are randomly distributed with regard to separation distance. Luminescence properties of AlN are interpreted basing on the model of localised recombination involving electron tunnel transitions from the excited state of D to the ground state of A, proposed by Jain et al. (2012) . The observed features of PL, afterglow and TL of AlN ceramics are …

UV light induced processes in pure and doped AlN ceramics

The present research has been sponsored by the Latvian Council of Science , Grant No. lzp-2018/1-0361 “Research of luminescence mechanisms and dosimeter properties in prospective nitrides and oxides using TL and OSL methods “; Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union's Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 73950 , project CAMART 2

Thermoluminescence Response of AlN+Y2O3 Ceramics to Sunlight and X-Ray Irradiation

The present research has been sponsored by the Latvian Council of Science, Grant No. lzp-2018/1-0361. The Institute of Solid State Physics, University of Latvia as the Centre of Excellence has received funding from the European Union’s Hori-zon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-Teaming-Phase2 under grant agreement No.73950, project CAMART.2

Recombination luminescence in aluminum nitride ceramics

Photoluminescence (PL) and afterglow luminescence (AGL) produced by UV laser irradiation with varied intensity were studied in AlN ceramics in the 10–300 K temperature range. Luminescence spectra of AlN ceramics contain the UV–blue band built up of two components – the UV (3.18 eV) and Blue (2.58 eV) bands, which are presumably ascribed to recombination luminescence involving oxygen-related centers in the bulk and on the surface of AlN, correspondingly. It was found that position of the emission band maximum of AlN ceramics depends on such factors as excitation density, temperature, and delay time after excitation ceasing – in the case of AGL. In PL spectra, the excitation density growth pr…

Luminescence processes induced by UV radiation in A1N nanotips and nanorods

Abstract The processes of the UV radiation induced photoluminescence, thermoluminescence and optically stimulated luminescence in the AlN nanotips and nanorods are studied in comparison with those in the AlN ceramics. The emission spectra of the UV radiation induced luminescence processes in the AlN nanostructures are similar to those of AlN ceramics, presumably originating from recombination processes with participation of the oxygen-related centres. In the nanostructures the luminescence processes occur mainly through the excitation of the host lattice, probably due to the smaller content of the randomly distributed defects in the lattice. The observed small mutual differences in the lumi…

Spectral and kinetic characteristics of pyroelectric luminescence in LiGaO2

Abstract Pyroelectric luminescence was observed in noncentrosymmetrical crystal LiGaO2 with the direct band gap around 6 eV. For the first time spectral and kinetic characteristics of pyroelectric luminescence were obtained. The temporal structure of the PEL signal was determined as a sequence of pulses with duration not longer than several nanoseconds. This allowed proposing of the luminescence mechanism: in vacuum conditions in LiGaO2 crystal pyroelectric luminescence occurs inside the sample due to radiative recombination of electrons with the positively charged intrinsic luminescence centres.