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RESEARCH PRODUCT
Localised transitions in luminescence of AlN ceramics
Laima TrinklerB. Berzinasubject
RadiationMaterials sciencePhotoluminescenceExcited stateIrradiationAtomic physicsGround stateLuminescenceInstrumentationThermoluminescenceQuantum tunnellingAfterglowdescription
Abstract The photoluminescence (PL) and thermoluminescence (TL) properties of AlN ceramics revealed under UV irradiation are determined mainly by oxygen-related centres, giving rise to the UV (around 3.18 eV) and the Blue (2.58 eV) bands. It was found that the UV irradiation-generated donor–acceptor pairs (DAPs), responsible for the UV emission band, are randomly distributed with regard to separation distance. Luminescence properties of AlN are interpreted basing on the model of localised recombination involving electron tunnel transitions from the excited state of D to the ground state of A, proposed by Jain et al. (2012) . The observed features of PL, afterglow and TL of AlN ceramics are explained by dependence of tunnelling recombination probability on separation distance between D and A implied by the used model.
year | journal | country | edition | language |
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2014-12-01 | Radiation Measurements |