Use of aluminum nitride for UV radiation dosimetry

2007

Abstract An investigation of AlN ceramics for applications in UV radiation detection shows the advantages of using the 480 nm emission band for optically stimulated luminescence signal detection instead of the previously used 400 nm emission band since the rate of decrease of the response signal at room temperature is lower than that of the 400 nm band, and its excitation region falls in the UV-B range.

Oxygen-related defects and energy accumulation in aluminum nitride ceramics

2001

Abstract Features of oxygen-related defects in the AlN crystalline lattice were studied. Spectral characteristics of photoluminescence and photostimulated luminescence under the UV light irradiation of AlN ceramics were examined. The results obtained allow us to propose the mechanisms of luminescence and radiation-induced energy accumulation in AlN.

Optical Properties of Natural and Synthetic Beryl Crystals

2015

The results of investigation of photoluminescence and UV-Visible absorption spectra of natural beryl crystals from Ural Mountains before and after fast neutron irradiation and synthetic crystal grown in Belarus and Russia are presented. Photoluminescence (PL) spectra of synthetic beryl crystals contain a broad band with maxima 740 nm excited both by UV light (λex = 260 nm, 271 nm) and laser excitation (λex =263 nm). This band is connected with Fe 2+ ions. The temperature lowering down to 8 K leads to appearance of narrow lines in the 680 - 720 nm regions. Emission lines observed in the luminescence spectra are connected with electron transition 2 Eg→ 4 A2g of the Cr 3+ ions: R-lines (682.5 …

Nitrogen vacancy type defect luminescence of AlN nanopowder

2020

Abstract Native luminescent defects were investigated in AlN nanopowder (NP) using spectral characterization methods. Photoluminescence and its excitation spectra were studied within a wide temperature range from 8K up to room temperature. It was found that in AlN NP a broad luminescence band appears within a blue spectral region consisting of at least two sub-bands at 415 nm and 390 nm, which can be related to presence of two different but in the same time similar defect types. These luminescent defects are located either inside the bulk material or on the material surface. Interaction of the surface defects with environmental oxygen was found resulting in quenching of the blue luminescenc…

UV-light induced luminescence processes in Al2O3 bulk and nanosize powders

2010

Abstract UV-light induced photoluminescence (PL) and thermoluminescence (TL) have been studied in the alumina (Al2O3) bulk and nanosize powders. It has been found that luminescence properties of the studied alumina powders are determined mainly by presence of the uncontrolled impurities of titanium, iron and chromium. Despite the general similarity of PL characterized by two main emission band around 400 and 750 nm a number of differences has been observed in relative yield and position of the emission bands as well as in the excitation spectrum of the short wavelength band. Essential differences have been observed also in the intensity of the TL signal, TL curves and TL emission spectra re…

Photoluminescence of Al2O3 nanopowders of different phases

2012

Abstract Photoluminescence was studied in six samples of Al2O3 nanopowders produced from the same initial material by calcination in the 800–1400 °C temperature range. At temperature around 1200 °C phase transition in aluminum oxide lattice occurs; the samples produced at temperatures up to 1200 °C contain mainly δ phase, while those obtained at 1400 °C contain pure α phase. In all studied samples of nominally pure aluminum oxide nanopowders photoluminescence is determined by trace level concentrations of uncontrolled impurities. It was found that phase transition is accompanied with modification of the emission spectrum: a broad band centered around 750 nm presumably ascribed to emission o…

Radiation induced luminescence processes in c-BN

2004

Abstract Spectral properties of cubic boron nitride have been studied using methods of photoluminescence (PL), X-ray excited luminescence (XL), thermoluminescence (TL) and optically stimulated luminescence. It is found that emission of cubic boron nitride is presented by 4 subbands, their relative yield is determined by the excitation type: blue, green (dominant) and red bands are observed in PL, ultraviolet, blue (dominant), green and red bands—in XL. Three thermal peaks are found in TL curves in the 0–700°C temperature range, their presence and intensity depend on radiation type used. A tentative correspondence between thermal peaks and emission bands is found.

Luminescence properties of AlN nanostructures revealed under UV light irradiation

2007

The luminescence properties of the AlN nanostructures – nanorods and nanotips -revealed under the UV irradiation are similar to those of the AlN ceramics. Presumably they are induced by the recombination processes in the oxygen-related centers. All the studied luminescence processes (photoluminescence, thermoluminescence and optically stimulated luminescence) in the nanostructures occur mainly through the host lattice excitation. That may be explained by the smaller concentration of the defect centers and more perfect structure of the host lattice of the nanostructures compared to the ceramics. The small mutual differences revealed in the spectra and TL curves of the AlN nanotips and nanoro…

<title>Optical properties of hydrogen-containing MgO crystal</title>

2008

The photoluminescence (PL), its excitation (PLE) and absorption spectra in ultraviolet, visible and infrared (UV-VIS-IR) regions were used to investigate the MgO single crystals irradiated by fast neutrons. It is shown that the photoluminescence band of the MgO crystals at 730 nm belongs to the hydrogen-containing complex centers V-OH-Fe3+, which are transformed during the irradiation with fast neutrons. The behavior of the PL band 730 nm after fast neutron irradiation depends on the iron-chromium concentration. It is found that the fast neutron irradiation produces the interstitial proton H+i and the Mg(OH)2 microphase.© (2008) COPYRIGHT SPIE--The International Society for Optical Engineer…

Photoluminescence in AlN: macro‐size and nano‐powder

2007

Photoluminescence (PL) properties in AlN are studied when size of polycrystalline grains is reduced from macro-size (AlN ceramics and macro-size powder) to nano-size (nano-powder). It was found that in all these materials within the UV- blue spectral region two PL bands are observed at ∼400 nm (caused by the oxygen-related defects) and at 480 nm (with unknown defect structure) but the ratio of their intensities depends on the grain size. Reduction of AlN grain size results in decrease of the 400 nm band and increase of the 480 nm band. It allows the following conclusions: i) reduction of AlN grain size results in decrease of oxygen (the native impurity of AlN) content in the crystalline lat…

Optical Properties of Natural and Synthetic Minerals

2015

The results of investigation of optical absorption and photoluminescence (PL) of topaz, beryl and yttrium aluminium garnet crystals doped with different concentrations of transition ions exposed to fast neutron irradiation and electron irradiation are presented. We suppose that irradiation leads to the formation of two types of complex centers: "Me2+-F+ (or F) centre" and complex centers, which consist of a cation vacancy and an impurity (iron, manganese and chromium) ion. Exchange interaction between radiation defects and impurity ions during neutron or electron irradiation gives rise to appearance of additional absorption and luminescence band broadening in investigated crystals.

Peculiarities of photoluminescence of Al2O3 bulk and nanosize powders at low temperatures

2011

Abstract Photoluminescence has been studied in the aluminum oxide (Al2O3) bulk and nanosize powders in the 300–8 K temperature range. In both samples luminescence spectrum is characterized by presence of broad blue and red bands caused mainly by emission from the uncontrolled titanium impurity. At low temperatures luminescence intensity increases by several times and the red band obtains fine structure. The nature of the fine structure is discussed suggesting manifestation of splitting of the Ti3+ emitting level due to Jahn–Teller effect or overlapping of Ti3+ emission band with narrow lines from other emitting ions. The observed differences in low-temperature spectral features of nanopowde…

UV light induced luminescence processes in AlN nanotips and ceramics

2005

UV induced luminescence properties of AlN (Eg = 6.2 eV) have been studied for AlN nanotips and AlN ceramics, using methods of photoluminescence, optically stimulated luminescence and thermoluminescence. In both types of objects the main luminescence band, which appears in prompt and stimulated emission spectra around 400 nm, arises due to presence of oxygen-related defects. The main difference between AlN nanotips and AlN ceramics is observed in excitation spectra and TL properties. Basing on the experimental results it is assumed that several different energy transfer mechanisms occur in AlN. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Influence of boron on donor–acceptor pair recombination in type IIa HPHT diamonds

2013

Abstract We report on the investigation of donor–acceptor pair (DAP) and free carrier recombination in HPHT IIa type diamonds and determination of boron concentration by differential transmittivity (DT) technique. Photoluminescence and photoluminescence excitation spectra were measured in 8–300 K temperature range and provided a broad (~ 0.67 eV) Gaussian DAP band which peaked at 2.2 eV at low temperatures, while above 200 K it sharply shifted to 2.5 eV and became more intense. Thermoluminescence measurements also demonstrated a similar tendency. This peculiarity was explained by DAP recombination between the nitrogen and the boron, the latter being in the ground and the excited states at l…

Re-Evaluation of Chromium Doped Alumina for Dosimetric Applications

2021

Financial support provided by Scientific Research “Luminescence Mechanisms and Dosimeter Properties in Prospective Nitrides and Oxides Using TL and OSL Methods” LZP FLPP No. LZP-2018/1-0361 implemented at the Institute of Solid State Physics, University of Latvia is greatly acknowledged. The Institute of Solid State Physics, University of Latvia as the Centre of Excellence has received funding from the European Union’s Horizon 2020 Framework Program H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART².

Studies of radiation defects in cerium, europium and terbium activated oxyfluoride glasses and glass ceramics

2015

Abstract Terbium, cerium and europium activated oxyfluoride glasses and glass ceramics have been studied by thermally stimulated luminescence (TSL) and optical absorption techniques after the X-ray irradiation. A creation of colour centres in oxyfluoride glass matrix and TSL peaks depending on the activator type were observed. LaF 3 and rare earth activators were analysed by SEM–EDS.

Luminescence mechanisms of oxygen-related defects in AlN

2002

Spectral characteristics of native oxygen-related defects existing in the crystalline lattice of AlN were studied. Features of photoluminescence observed under exposure to ultraviolet light together with those of the photostimulated luminescence testify the recombination character of luminescence. The mechanism of luminescence of oxygen-related defects is proposed.

Defect-induced blue luminescence of hexagonal boron nitride

2016

Abstract Native defect-induced photoluminescence around 400 nm (blue luminescence - BL) was studied in hBN materials with different size and various origins. The following spectral characterizations were used: spectra of luminescence and its excitation, luminescence dependence on temperature, luminescence kinetics, optically stimulated luminescence and infrared absorption. It was found, that the BL is characteristic for all these materials, which were studied. The BL forms a wide, asymmetric and phonon-assisted emission band at 380 nm. This luminescence can be excited either through the exciton processes, or with light from two defect-induced excitation bands at 340 nm and 265 nm. It was fo…

Pyroelectric activity of LiGaO2, Li2GeO3, Li2B4O7 and LiNbO3 crystals: Pyroelectric luminescence and excitation of cathodoluminescence in scintillato…

2020

Abstract Basing on results of electric, spectral and kinetic measurements of spontaneous luminescence caused by cooling/heating in pyroelectric crystals LiGaO2, Li2GeO3, Li2B4O7 and LiNbO3 a mechanism of pyroelectric luminescence is proposed. Series of experiments were undertaken attaching a scintillating phosphor ScPO4 to a pyroelectric crystal and subjecting a pair of the bounded crystals to cooling/heating process. Pyroelectric activity causes not only pyroluminescence in pyroelectric crystals but also luminescence in a ScPO4, which is characterized with high intensity and kinetic and spectral properties typical for the intrinsic luminescence of a scintillator.

Exciton luminescence of boron nitride nanotubes and nano-arches

2006

We report photoluminescence (PL) and PL-excitation spectroscopy of BN nanotubes (nt-BN) mixed with some residual hexagonal crystalline (h-BN) starting material, and of pure h-BN microcrystalline powder. The nanotube phase exhibits a broad-band PL near 380 nm, in agreement with a published report of cathodoluminescence from a sample comprising >90% nanotubes. This emission is almost 3 eV lower in energy than unrelaxed exciton states found in recent all-electron theories of nt-BN and h-BN and about 1.4 eV lower than the lowest (perturbed dark?) exciton seen in absorption of nt-BN. This may suggest that excitons in nt-BN vibrationally relax to self-trapped states before emitting, a path found …

AlN Ceramics from Nanosized Plasma Processed Powder, its Properties and Application

2014

Spectral properties of AIN ceramics

1997

Spectral properties of oxygen-related defects are studied in AIN ceramics at room temperatures. Original results concerning the photoluminescence under ultraviolet irradiation are obtained; they include the excitation spectrum and irradiation dose effects. The ultraviolet light energy storage and its release under irradiation with visible or infrared light in the form of the photostimulated luminescence has been observed in AIN ceramics. The properties of the photostimulated luminescence such as creation, emission and stimulation spectra are reported. For the explanation of the experimental results the mechanism of the recombination luminescence involving the oxygen-related defect is propos…

X-ray induced defects in advanced lithium orthosilicate pebbles with additions of lithium metatitanate

2019

Abstract Advanced lithium orthosilicate (Li4SiO4) pebbles with additions of lithium metatitanate (Li2TiO3) as a secondary phase have attracted international attention as an alternative solid-state candidate for the tritium breeding in future nuclear fusion reactors. In this research, the generation of radiation-induced defects in the Li4SiO4 pebbles with various contents of Li2TiO3 was analysed in-situ by X-ray induced luminescence technique. After irradiation with X-rays, the accumulated radiation-induced defects in the Li4SiO4 pebbles were studied by electron spin resonance, thermally stimulated luminescence and absorption spectrometry. On the basis of the obtained results, it is conclude…

Anisotropic photoluminescence of nonpolar ZnO epilayers and ZnO/Zn1 −xMgxO multiple quantum wells grown on LiGaO2 substrate

2020

Ministry of Science and Technology, Taiwan (104-2221-E-110-012-MY3, 107-2221-E-110-004-MY3); National Natural Science Foundation of China (51602309, U1605245).

Comparison of Luminescence in LiGaO2, Al2 O3 -Ga and Al2 O3 -Li Crystals

2018

We have studied luminescence of LiGaO 2 , Al 2 O 3 -Ga and Al 2 O 3 -Li crystals in order to reveal the nature of luminescence centres and mechanisms in these crystals. In Al 2 O 3 -Ga presence of Ga impurities determines occurrence of the 280 nm emission band, which demonstrates intra-centre character in photoluminescence and recombination character under X-ray irradiation. In Al 2 O 3 -Li crystal lithium induced luminescence is presented with the 326 nm band, which has a recombination character. Basing on spectral similarity of the main luminescence bands in pure LiGaO 2 crystal with the dopant-induced emission bands in Al 2 O 3 , and on peculiarities of the X-ray induced thermoluminescen…

Spectral characterization of bulk and nanostructured aluminum nitride

2009

Spectral characteristics including photoluminescence (PL) spectra and its excitation spectra for different AlN materials (AlN ceramics, macro size powder and nanostructured forms such as nanopowder, nanorods and nanotips) were investigated at room temperature. Besides the well known UV-blue (around 400 nm) and red (600 nm) luminescence, the 480 nm band was also observed as an asymmetric long-wavelength shoulder of the UV-blue PL band. This band can be related to the luminescence of some kind of surface defects, probably also including the oxygen-related defects. The mechanisms of recombination luminescence and excitation of the UV-blue luminescence caused by the oxygen-related defects were …

Electronic and Optical Properties of Rocksalt Mg1−xZnxO and Wurtzite Zn1−xMgxO with Varied Concentrations of Magnesium and Zinc

2022

The financial support of M-ERA.NET project “ZnMgO materials with tunable band gap for solar-blind UV sensors” (ZMOMUVS) is acknowledged. Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Program H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under Grant Agreement No. 739508, project CAMART2. The calculations were performed at the Latvian SuperCluster (LASC) located in Institute of Solid State Physics, University of Latvia.

Spectral Characteristics of Native Defects in BN

2002

Spectral characteristics of native defects from the crystalline lattice of c-BN were studied. It is found that the photoluminescence (PL) spectrum under exposure to ultraviolet-blue light has a complex structure containing a predominant wide 2.5 eV luminescence band at room temperature. The photostimulated luminescence (PSL) consists of a band, which is coincident with the 2.5 eV PL. The results obtained allow to conclude that the same defects are responsible for both the PL and PSL formation.

Ab initio simulations on the atomic and electronic structure of single-walled BN nanotubes and nanoarches

2009

To simulate the perfect single-walled boron nitride nanotubes and nanoarches with armchair- and zigzag-type chiralities and uniform diameter of � 5 nm, we have constructed their one-dimensional (1D) periodic models. In this study, we have compared the calculated properties of nanotubes with those for both hexagonal and cubic phases of bulk: bond lengths, binding energies per B–N bond, effective atomic charges as well as parameters of total and projected one-electron densities of states. For both phases of BN bulk, we have additionally verified their lattice constants. In the density functional theory (DFT), calculations performed using formalism of the localized Gaussian-type atomic functio…

Luminescence properties of LiGaO2 crystal

2017

The study was supported by the Latvia-Lithuania-Taiwan research project “Nonpolar ZnO thin films: growth-related structural and optical properties” (Latvia: LV-LT-TW/2016/5 , Lithuania: TAP LLT 02/2014 , Taiwan: MOST 103-2923-M-110-001-MY3 ).

Optical properties of lithium gallium oxide

2017

Abstract The optical dielectric function tensor of orthorhombic single-crystal LiGaO 2 was determined for polarizations along a , b , and c crystal-axis in the photon energy range from 0.04 eV to 6.5 eV by the generalized spectroscopic ellipsometry. In the far-infrared spectral range from 12.4 meV to 40 meV, the dielectric function was determined from conventional polarized transmittance and polarized reflectance measurements. Lineshape analysis of the dielectric function tensor major components allowed for a determination of the long-wavelength optical phonon characteristics, refractive indices dispersion, and parameters of interband and excitonic optical transitions.

Potential application of some wide band gap materials for UV dosimetry

2005

Properties of some wide band gap materials–natural and CVD diamonds – have been studied for their potential application in UV dosimetry, using methods of optically stimulated luminescence and thermoluminescence. The observed properties are compared with those of the previously studied AlN ceramics. From the OSL excitation spectra, it follows that spectral sensitivity of the studied materials falls mainly into the UVC range, OSL and TL emission spectra are located within the visible light region, thus suitable for usual photodetectors. OSL stimulation spectra of the studied materials have a continuous character and are located in a broad visible/near infrared spectral region implying that th…

Carrier dynamics in epilayers and nanocolumns of ternary AlGaN with a tunable bandgap

2012

We apply several optical time-resolved techniques to investigate the dynamics of excess carriers in AlxGa1−xN nanocolumns grown on (111) silicon substrates and in thick AlxGa1−xN epitaxial layers deposited on sapphire. We demonstrate that carrier lifetime drops in nanocolumns by several times if compared to epilayers with similar Al content; in addition, recombination rate displays a strong nonlinearity on excitation. On the other hand, carrier localization effects observed in the epilayers completely disappear in nanocolumns.

Luminescence properties of wurtzite AlN nanotips

2006

The optical properties of aluminum nitride nanotips (AlNNTs) synthesized via vapor transport and condensation process have been studied by cathodoluminescence, photoluminescence (PL), thermoluminescence (TL), and UV absorption measurements. Two defect related transitions around 2.1 and 3.4eV and an excitonic feature at 6.2eV were identified. Compared to the AlN macropowders, the AlNNTs showed a blueshift (+0.2eV) of the ∼3.2eV peak. Analysis of both PL and TL excitation measurements indicated the existence of subband gap multiple energy levels in AlNNTs. A significant TL intensity even at 145°C suggests possible ultraviolet detector and dosimetric applications of these AlNNTs.

Influence of vinyltriethoxysilane concentration on structural and luminescent characteristics of cerium doped yttrium based silicate phosphors

2015

Abstract Cerium doped yttrium silicates phosphors (YSO:Ce) were prepared by gel combustion using vinyltriethoxysilane (VTEOS) as silicon sources along with aspartic acid as fuel and yttrium-cerium nitrate as oxidizer. The study presents the influence of VTEOS amount in the synthesis mixture on the structural and luminescent characteristics of silicate phosphors. The understanding of precursor׳s decomposition was achieved on the basis of thermal analysis in association with gas evolved analysis. XRD, FTIR and XPS were used to reveal the structural changes that occur with VTEOS molar amount variation from 1 to 3 mol. It was found that the main crystalline phase was X2-Y 2 SiO 5 . The luminesc…

Photoconductivity & photoelectron emission of LiGaO2 crystal excited in intrinsic absorption range

2019

This research is funded by the Latvian Council of Science, project “Research of luminescence mechanisms and dosimeter properties in prospective nitrides and oxides using TL and OSL methods], project No. lzp-2018/0361.

UV light energy storage and thermoluminescence in AlN ceramics

2007

AlN ceramics, untreated and subjected to oxygen ion implantation, are studied for potential application in TL dosimetry of UV light. Based on photoluminescence and thermoluminescence measurements there are shown advantages of the selection of the 480 emission band for TL signal recording instead of the previously used 400 nm band: higher intensity of the TL signal, lower fading rate of the accumulated TL signal, excitation region (270-340 nm) corresponding to UV-B range, monitoring of which is actual in UV dosimetry. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Usability of Cr-Doped Alumina in Dosimetry

2019

Dosimetry is a widespread material science field dealing with detection and quantification of ionizing radiation using electronic processes in materials. One of the main aspects that determines the performance of dosimeters is the type of defects the material contains. Crystalline lattice imperfections are formed around impurity ions, which may have a smaller or larger size, or different oxidation states compared to host ions. In this study, we show what effects Cr impurities have on the luminescent properties of alumina. Porous Al 2 O 3 : Cr microceramics synthesized using the sol-gel method showed a higher thermoluminescence response than a single crystal ruby. We have found that Cr 2 O 3…

<title>Use of AlN ceramics in ultraviolet radiation dosimetry</title>

2003

AlN-Y2O3 ceramics is studied as a material for application in the area of ultraviolet radiation (UVR) dosimetry. The properties of optically stimulated luminescence (OSL) and thermally stimulated luminescence (TL) revealed by AlN ceramics are characterized and considered for practical application. A special attention is devoted to studies of the spectral properties of the material, including stimulated luminescence. Spectral properties of the material make it potentially suitable for dosimetric application both in UV-C region (200-290 nm), where it has the maximum sensitivity, and in UV-B+UV-A (290-350 nm) region, where the spectral behavior of its sensitivity coincides rather well with tha…

Investigation of Oxygen-Related Luminescence Centres in AlN Ceramics

2000

The structure of oxygen-related luminescence centres in nominally undoped and Y 2 O 3 doped AlN ceramics was investigated by electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR) and optically-detected EPR. The photoluminescence-detected EPR lines having g-values of 1.990 and 2.008 were assigned to a recombination between neighbouring donor and acceptor pairs. The two EPR lines at g = 1.987 and 2.003 detected via the recombination luminescence in the afterglow are thought to be due to a recombination between the same, but distant donor and acceptor pairs. The donor was previously speculated to be an electron trapped on an oxygen impurity which substitutes for a ni…

Magnetic resonance investigations of oxygen-related luminescence centres in AlN ceramics

2001

Abstract The structure of oxygen-related luminescence centres in nominally undoped and Y2O3-doped AIN ceramics were investigated by electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR) and optically-detected EPR. The photoluminescence-detected EPR lines having g values of 1.990 and 2.008 were attributed to neighbouring donor and acceptor pairs causing the recombination luminescence excited in the ultraviolet. The two EPR lines at g = 1.987 and g = 2.003, detected via the recombination luminescence in the afterglow, are thought to be due to a recombination between the same, but more distant donor and acceptor pairs. The donor is supposed to be an electron trapped …

Localised transitions in luminescence of AlN ceramics

2014

Abstract The photoluminescence (PL) and thermoluminescence (TL) properties of AlN ceramics revealed under UV irradiation are determined mainly by oxygen-related centres, giving rise to the UV (around 3.18 eV) and the Blue (2.58 eV) bands. It was found that the UV irradiation-generated donor–acceptor pairs (DAPs), responsible for the UV emission band, are randomly distributed with regard to separation distance. Luminescence properties of AlN are interpreted basing on the model of localised recombination involving electron tunnel transitions from the excited state of D to the ground state of A, proposed by Jain et al. (2012) . The observed features of PL, afterglow and TL of AlN ceramics are …

Optical Properties of Irradiated Topaz Crystals

2015

The results of an investigation of UV-Visible absorption and photoluminescence spectra of colorless topaz before and after neutron irradiation, natural blue topaz from Ukraine, and yellow topaz are presented. We assume that the absorption band ~ 620 nm and broad emission band 300-700 nm in topaz crystals are associated with exchange interaction between a radiation defect (anion vacancies, which capture one or two electrons) and impurity ions Cr 3+ , Fe 3+ and Mn 2+ .

UV light induced processes in pure and doped AlN ceramics

2021

The present research has been sponsored by the Latvian Council of Science , Grant No. lzp-2018/1-0361 “Research of luminescence mechanisms and dosimeter properties in prospective nitrides and oxides using TL and OSL methods “; Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union's Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 73950 , project CAMART 2

Influence of Stress on Electronic and Optical Properties of Rocksalt and Wurtzite MgO–ZnO Nanocomposites with Varying Concentrations of Magnesium and…

2022

The financial support of M-ERA.NET project “ZnMgO materials with tunable band gap for solar-blind UV sensors” (ZMOMUVS) is greatly acknowledged. The Institute of Solid State Physics, University of Latvia, as the Center of Excellence, has received funding from the European Union’s Horizon 2020 Framework Program H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement no. 739508, project CAMART2. The calculations were performed at the Latvian SuperCluster (LASC) located at the Institute of Solid State Physics, University of Latvia.

Thermoluminescence Response of AlN+Y2O3 Ceramics to Sunlight and X-Ray Irradiation

2021

The present research has been sponsored by the Latvian Council of Science, Grant No. lzp-2018/1-0361. The Institute of Solid State Physics, University of Latvia as the Centre of Excellence has received funding from the European Union’s Hori-zon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-Teaming-Phase2 under grant agreement No.73950, project CAMART.2

Recombination luminescence in aluminum nitride ceramics

2013

Photoluminescence (PL) and afterglow luminescence (AGL) produced by UV laser irradiation with varied intensity were studied in AlN ceramics in the 10–300 K temperature range. Luminescence spectra of AlN ceramics contain the UV–blue band built up of two components – the UV (3.18 eV) and Blue (2.58 eV) bands, which are presumably ascribed to recombination luminescence involving oxygen-related centers in the bulk and on the surface of AlN, correspondingly. It was found that position of the emission band maximum of AlN ceramics depends on such factors as excitation density, temperature, and delay time after excitation ceasing – in the case of AGL. In PL spectra, the excitation density growth pr…

Luminescence processes induced by UV radiation in A1N nanotips and nanorods

2008

Abstract The processes of the UV radiation induced photoluminescence, thermoluminescence and optically stimulated luminescence in the AlN nanotips and nanorods are studied in comparison with those in the AlN ceramics. The emission spectra of the UV radiation induced luminescence processes in the AlN nanostructures are similar to those of AlN ceramics, presumably originating from recombination processes with participation of the oxygen-related centres. In the nanostructures the luminescence processes occur mainly through the excitation of the host lattice, probably due to the smaller content of the randomly distributed defects in the lattice. The observed small mutual differences in the lumi…

Spectral and kinetic characteristics of pyroelectric luminescence in LiGaO2

2019

Abstract Pyroelectric luminescence was observed in noncentrosymmetrical crystal LiGaO2 with the direct band gap around 6 eV. For the first time spectral and kinetic characteristics of pyroelectric luminescence were obtained. The temporal structure of the PEL signal was determined as a sequence of pulses with duration not longer than several nanoseconds. This allowed proposing of the luminescence mechanism: in vacuum conditions in LiGaO2 crystal pyroelectric luminescence occurs inside the sample due to radiative recombination of electrons with the positively charged intrinsic luminescence centres.