6533b7d5fe1ef96bd1263b07
RESEARCH PRODUCT
Nitrogen vacancy type defect luminescence of AlN nanopowder
R. RuskaB. BerzinaV. KorsaksLaima Trinklersubject
QuenchingMaterials sciencePhotoluminescenceExcitonOrganic ChemistryAnalytical chemistrychemistry.chemical_element02 engineering and technologyAtmospheric temperature range010402 general chemistry021001 nanoscience & nanotechnology01 natural sciencesOxygenAtomic and Molecular Physics and Optics0104 chemical sciencesElectronic Optical and Magnetic MaterialsInorganic ChemistrychemistryVacancy defectElectrical and Electronic EngineeringPhysical and Theoretical Chemistry0210 nano-technologyLuminescenceSpectroscopyRecombinationdescription
Abstract Native luminescent defects were investigated in AlN nanopowder (NP) using spectral characterization methods. Photoluminescence and its excitation spectra were studied within a wide temperature range from 8K up to room temperature. It was found that in AlN NP a broad luminescence band appears within a blue spectral region consisting of at least two sub-bands at 415 nm and 390 nm, which can be related to presence of two different but in the same time similar defect types. These luminescent defects are located either inside the bulk material or on the material surface. Interaction of the surface defects with environmental oxygen was found resulting in quenching of the blue luminescence (BL). Three BL mechanisms were revealed, depending on spectral region of the exciting light, resulting in intra-center luminescence, recombination luminescence and exciton caused luminescence. Variations of the F-centers are proposed to be responsible for the BL in AlN NP.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2020-10-01 | Optical Materials |