0000000000266628
AUTHOR
Valters Ziraps
Ion diffusion-controlled processes in fluoride crystals
Ionic and ion diffusion-controlled thermally stimulated relaxation (TSR) processes in CaF 2 , BaF 2 and LiBaF 3 crystals (X-ray irradiated at 290 K) have been investigated by means of ionic conductivity and the correlated ionic thermally stimulated depolarisation current (TSDC), and radiation-induced optical absorption band thermal bleaching techniques at 290-650 K. It was found that under a DC field fluorides store large ionic space-charge. In CaF 2 , BaF 2 and LiBaF 3 , by using the ionic TSDC technique we were able to detect a series of the interstitial anion and/or anion vacancy delocalisation stages in the extrinsic ionic conductivity region. At least 4-6 wide and overlapping ionic TSD…
<title>Annealing of radiation defects in x-irradiated LiBaF<formula><inf><roman>3</roman></inf></formula></title>
Results of the glow rate technique application for analysis of the activation energy of thermostimulated annealing of X-ray created F-type color centers in pure and containing oxygen centers LiBaF3 crystals are presented. It is shown that depending on the impurity composition two alternative mechanisms could be involved in the annealing of color centers. It is proposed that either the anion vacancy governed migration of F-centers resulting in recombination with complementary defects, or the thermal delocalization of radiation created fluorine (Fi) interstitials captured by anti-structure defects followed by recombination with all kinds of complementary F-type centers are responsible for the…
Ion diffusion-controlled thermally stimulated processes in x-ray irradiated halide crystals
The ionic and ion diffusion-controlled thermally stimulated relaxation (TSR) processes in CaF2, BaF2, LiBaF3 and KBr crystals were investigated above 290 K by means of the ionic conductivity, ionic thermally stimulated depolarisation current (TSDC) and thermal bleaching techniques. Under a DC field the halide crystals store large ionic space charge. We were able to detect in CaF2, BaF2, LiBaF3 and KBr in the extrinsic ionic conductivity region a series of the ionic defect (the interstitial anion and/or anion vacancies - in fluorides; the cation vacancies - in KBr) release stages: 3-6 wide and overlapping ionic TSDC peaks. The correlated data of the ionic TSDC and the F band thermal show tha…
Radiation-induced electronic and ionic charge storage and release in sapphire
Radiation-induced thermally stimulated relaxation (TSR) processes in the reduced α-Al 2 O 3 (sapphire) crystal were investigated at 290-650 K by means of the TS current (TSC), ionic depolarisation current (TSDC) and electron emission (TSEE) techniques. After thermal (ionic) polarisation of sapphire wide (∼75 K) and asymmetric ionic dipolar TSDC peak at T max 590 K (disorientation of the anion vacancy-related dipoles) was detected. This peak correlates with the wide TSEE peak at T max 615 K, the radiation-induced electrical degradation (RIED) yield rise above 550 K (T max 745 K) and the chromium emission line broadening ip ruby. Above 450-500 K the anion vacancy hopping (migration) starts. T…
Annealing of Radiation Defects in X-Irradiated LiBaF3
AbstractResults of application of the glow rate technique GRT for analysis of the activation energy of thermostimulated annealing of X-ray created F-type color centers in LiBaF3 crystals, pure and containing hetero-valence oxygen centers are presented. It is shown that depending on impurity composition in crystal two alternative mechanisms are involved in annealing of color centers. It is proposed that either the anion vacancy governed migration of F- centers resulting in recombination with complementary defects, or the thermal delocalization of radiation created fluorine (Fi) interstitials captured by anti-structure defects followed by recombination with all kinds of complementary F- type …
<title>Ion and electron trapping: release and relaxation processes in fluoride crystals</title>
The thermally stimulated relaxation (TSR) processes in CaF2, BaF2 and LiBaF3 crystals (X-ray irradiated at LNT or RT) have been investigated by means of the ionic conductivity, thermally stimulated (TS) ionic depolarization current (TSDC), TS current (TSC), TS luminescence (TSL) and thermal bleaching techniques. The ionic TSDC measurements evidence that under DC field fluorides accumulate large ionic space-charge (thermoelectric state is formed) as a result of the migrating anion interstitial and/or vacancy capture on defects. In the ionic conductivity region (290 - 650 K) the thermoelectric state anneals, and several wide and overlapping anionic TSDC peaks are detected. The ionic TSDC stag…
<title>Shallow electron traps in alkali halide crystals: Mollwo-Ivey relations of the optical absorption bands</title>
Evidences are given that two classes of the transient IR- absorption bands: (a) with max. at 0.27-0.36 eV in NaCl, KCl, KBr, KI and RbCl (due to shallow electron traps according G. Jacobs or due to bound polarons according E.V. Korovkin and T.A. Lebedkina) and (b) with max. at 0.15-0.36 eV in NaI, NaBr, NaCl:I, KCl:I, RbCl:I and RbBr:I (due to on-center STE localized at iodine dimer according M. Hirai and collaborators) are caused by the same defect- atomic alkali impurity center [M+]c0e- (electron e- trapped by a substitutional smaller size alkali cation impurity [M+]c0). The Mollwo-Ivey plots (for the transient IR-absorption bands) of the zero-phonon line energy E0 (for NaCl, KCl, KBr, Rb…
<title>Thermostimulated electronic and ionic processes in irradiated sapphire</title>
Electronic and ionic thermostimulated (TS) relaxation (TSR) processes in nominally pure sapphire (α-Al2O3 grown with oxygen deficiency) have been investigated at 290 - 650 K by means of the TS current (TSC), ionic depolarization current (TSDC) and electron emission (TSEE) techniques. After thermal (ionic) polarization of the reduced sapphire wide (approximately 75 K) and asymmetric ionic dipolar TSDC peak at 590 K (disorientation of the anion vacancy-related dipoles) was detected. Above 450 - 500 K the anion vacancy hopping (migration) starts and their interaction with defects take place. This can lead to lattice dynamic disordering and anion vacancy diffusion-controlled processes in sapphi…
Thermally Stimulated Ionic and Electronic Processes and Radiation-Induced Defect Annealing in LiBaF3 Crystals
The electronic, ionic and ion-diffusion controlled thermally stimulated relaxation (TSR) processes in X-ray irradiated (at 80 K or 290 K) nominally pure LiBaF3 fluoroperovskite crystals have been investigated in the 90–550 K range by means of the ionic conductivity, ionic thermally stimulated depolarization current (TSDC), as well as the thermally stimulated current (TSC), thermally stimulated luminescence (TSL) and the X-ray induced optical absorption spectra thermal bleaching techniques. The role of the thermoactivated ionic and ionic-electronic processes in the TSR (thermal bleaching, TSC and TSL) of X-ray irradiated crystals is studied above 250 K. The TSL efficiency (ratio TSL/TSC) ver…
On nature of the transient IR-absorption STE-like bands at 0.15–0.36eV in alkali halides
New evidence is given that two classes (A and B) of the transient IR-absorption bands: (A) with max. at 0.15-0.36 eV (in NaCl : I, NaBr, NaI, KCl : I, KBr : I, RbCl : I, RbBr : I), due to on-centre self-trapped exciton and (B) with max. at 0.27-0.36 eV (in NaCI, KCl, KBr, RbCl), due to shallow trapped electrons or bound polarons, are caused by the same defect-shallow trapped electron (e-) at the substitutional (cation: c-site) alkali impurity cation (M + ): [M - ] 0 c e - . The A- and B-class IR bands have the same location, similar shape, half-width (exactly coincide for KCl : I and KCl at 80 or 10 K with the same vibration structure). It is established that the same Mollwo-Ivey plot curve…