0000000000276751

AUTHOR

J. Dorsaz

showing 3 related works from this author

Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages

2008

Forward and reverse leakage currents in GaN/InGaN multi-quantum well light-emitting diodes (LEDs) are caused by reactive-ion etching (RIE) damages during device patterning. A method to recover the damaged surfaces, based on a chemical etch in KOH: ethylene-glycol is described. Leakage currents decrease of more than a factor of 10 and are completely suppressed in most of devices.

Materials sciencebusiness.industryN-TYPE GANLIGHT-EMITTING-DIODEStechnology industry and agriculturePLASMA-INDUCED DAMAGECondensed Matter PhysicsElectronic Optical and Magnetic Materialslaw.inventionlawOptoelectronicsReactive-ion etchingbusinessInstrumentationDiodeLight-emitting diodeLeakage (electronics)The European Physical Journal Applied Physics
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Current status of AlInN layers lattice-matched to GaN for photonics and electronics

2007

We report on the current properties of Al1-x InxN (x approximate to 0.18) layers lattice- matched ( LM) to GaN and their specific use to realize nearly strain- free structures for photonic and electronic applications. Following a literature survey of the general properties of AlInN layers, structural and optical properties of thin state- of- the- art AlInN layers LM to GaN are described showing that despite improved structural properties these layers are still characterized by a typical background donor concentration of ( 1 - 5) x 10(18) cm(-3) and a large Stokes shift (similar to 800 meV) between luminescence and absorption edge. The use of these AlInN layers LM to GaN is then exemplified …

PhotoluminescenceMaterials scienceAcoustics and UltrasonicsGallium nitrideSettore ING-INF/01 - ElettronicaVertical-cavity surface-emitting laserchemistry.chemical_compoundMOLECULAR-BEAM EPITAXYALGAN/GAN QUANTUM-WELLSIII-VDISTRIBUTED BRAGG REFLECTORSCRYSTALSURFACE-EMITTING LASERSbusiness.industryREFLECTORSHeterojunctionOPTICAL-PROPERTIESCondensed Matter PhysicsAL1-XINXN THIN-FILMSSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsDISTRIBUTED BRAGGAbsorption edgechemistryOptoelectronicsVAPOR-PHASE EPITAXYIII-V NITRIDESFIELD-EFFECT TRANSISTORSNITRIDESbusinessLiterature surveyCRYSTAL GALLIUM NITRIDELasing thresholdGALLIUM NITRIDEMolecular beam epitaxyJournal of Physics D: Applied Physics
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First InGaN/GaN thin Film LED using SiCOI engineered substrate

2006

InGaN / GaN multiple quantum well (MQW) light emitting diodes (LEDs) were deposited by metal-organic chemical vapor deposition (MOCVD) onto SiCOI engineered substrates. SiCOI substrates are composed of SiC thin film transferred on a silicon substrate through silicon oxide layer by the Smart Cut™ technology. LEDs structures grown on SiCOI were characterized, then transferred onto Si substrates via a metallic bonding process and SiCOI substrates were removed. Three different metallic stacks were used for metallic bonding, including mirror and barrier diffusion. Vertical thin film LED obtained were characterized and showed a 2 to 3 times increase of external quantum efficiency. These results d…

Materials scienceSiliconbusiness.industrychemistry.chemical_elementChemical vapor depositionGallium nitrideCondensed Matter PhysicsSettore ING-INF/01 - ElettronicaLight emitting diodeslaw.inventionchemistrylawOptoelectronicsQuantum efficiencyInGaN/GaN LEDs SiCOI technologyMetalorganic vapour phase epitaxyThin filmbusinessSilicon oxideLight-emitting diodeMetallic bondingefficiency LEE
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