6533b7d6fe1ef96bd1265cce
RESEARCH PRODUCT
Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages
J.-f. CarlinH.-j. BühlmannNicolas GrandjeanJ. DorsazMauro MoscaEric FeltinA. Castigliasubject
Materials sciencebusiness.industryN-TYPE GANLIGHT-EMITTING-DIODEStechnology industry and agriculturePLASMA-INDUCED DAMAGECondensed Matter PhysicsElectronic Optical and Magnetic Materialslaw.inventionlawOptoelectronicsReactive-ion etchingbusinessInstrumentationDiodeLight-emitting diodeLeakage (electronics)description
Forward and reverse leakage currents in GaN/InGaN multi-quantum well light-emitting diodes (LEDs) are caused by reactive-ion etching (RIE) damages during device patterning. A method to recover the damaged surfaces, based on a chemical etch in KOH: ethylene-glycol is described. Leakage currents decrease of more than a factor of 10 and are completely suppressed in most of devices.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2008-06-19 | The European Physical Journal Applied Physics |