Poly(alkoxyphenylene-thienylene) Langmuir-Schäfer thin-films for advanced performance transistors
Solution processed Langmuir-Scha ̈fer and cast thin films of regioregular poly(2,5-dioctyloxy-1,4- phenylene-alt-2,5-thienylene) are investigated as transistor active layers. The study of their field-effect properties evidences that no transistor behavior can be seen with a cast film channel material. This was not surprising considering the twisted conformation of the polymer backbone predicted by various theoretical studies. Strikingly, the Langmuir-Scha ̈fer (LS) thin films exhibit a field-effect mobility of 5 × 10-4 cm2/V‚s, the highest attained so far with an alkoxy-substituted conjugated polymer. Extensive optical, morphological, and structural thin-film characterization supports the a…
Ethane-Bridged Zinc-Porphyrin Dimers in Langmuir-Shäfer Thin Films: Structural and Spectroscopic Properties
This work reports on the structural and spectroscopic properties of ethane-bridged Zn porphyrin dimers (1) in Langmuir-Scha¨fer (LS) thin films by combining scanning force microscopy (SFM) with film balance, UV-vis absorption, fluorescence, and nanosecond laser flash photolysis measurements. Results show that depending on the surface pressure the Langmuir films of pure 1 can be arranged in two different condensed phases, whereas SFM of the LS films shows characteristic fractal networks constituted by nanoscopic aggregates. The spectral findings agree with a picture in which 1 is apparently present in the anti conformation but aggregated in a sort of H-type structure whose optical features r…
Nanostructural depth-profile and field-effect properties of poly(alkoxyphenylene-thienylene) Langmuir-Schäfer thin-films
The correlations between morphological features and field-effect properties of poly(alkoxyphenylene-thiophene) thin Langmuir–Schafer film deposited on differently terminated gate dielectric surfaces, namely bare and methyl functionalized thermal silicon dioxide (t-SiO2), have been systematically studied. The film morphology has been investigated at different film thickness by Scanning Force Microscopy. Films thicker than a few layers show comparable morphology on both dielectric surfaces while differences are seen for the ultra-thin polymer deposit in close proximity to the substrate. Such deposit is notably more heterogeneous on bare t-SiO2, while a more compact and uniform nanogranular st…